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Gadkari, Dattatray (2013) Detached phenomenon: Its effect on the crystal quality of Ga(1−x)InxSb bulk crystal grown by the VDS technique. Materials Chemistry and Physics, 139. 375-382 doi:10.1016/j.matchemphys.2012.09.060

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Reference TypeJournal (article/letter/editorial)
TitleDetached phenomenon: Its effect on the crystal quality of Ga(1−x)InxSb bulk crystal grown by the VDS technique
JournalMaterials Chemistry and Physics
AuthorsGadkari, DattatrayAuthor
Year2013 (May)Volume139
PublisherElsevier BV
DOIdoi:10.1016/j.matchemphys.2012.09.060Search in ResearchGate
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Mindat Ref. ID3060168Long-form Identifiermindat:1:5:3060168:8
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Full ReferenceGadkari, Dattatray (2013) Detached phenomenon: Its effect on the crystal quality of Ga(1−x)InxSb bulk crystal grown by the VDS technique. Materials Chemistry and Physics, 139. 375-382 doi:10.1016/j.matchemphys.2012.09.060
Plain TextGadkari, Dattatray (2013) Detached phenomenon: Its effect on the crystal quality of Ga(1−x)InxSb bulk crystal grown by the VDS technique. Materials Chemistry and Physics, 139. 375-382 doi:10.1016/j.matchemphys.2012.09.060
In(2013, May) Materials Chemistry and Physics Vol. 139 (2) Elsevier BV

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