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Li, Mingda, Hu, Ming, Yan, Wenjun, Ma, Shuangyun, Zeng, Peng, Qin, Yuxiang (2013) NO2 sensing performance of p-type intermediate size porous silicon by a galvanostatic electrochemical etching method. Electrochimica Acta, 113. 354-360 doi:10.1016/j.electacta.2013.09.120

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Reference TypeJournal (article/letter/editorial)
TitleNO2 sensing performance of p-type intermediate size porous silicon by a galvanostatic electrochemical etching method
JournalElectrochimica Acta
AuthorsLi, MingdaAuthor
Hu, MingAuthor
Yan, WenjunAuthor
Ma, ShuangyunAuthor
Zeng, PengAuthor
Qin, YuxiangAuthor
Year2013 (December)Volume113
PublisherElsevier BV
DOIdoi:10.1016/j.electacta.2013.09.120Search in ResearchGate
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Mindat Ref. ID3202052Long-form Identifiermindat:1:5:3202052:2
GUID0
Full ReferenceLi, Mingda, Hu, Ming, Yan, Wenjun, Ma, Shuangyun, Zeng, Peng, Qin, Yuxiang (2013) NO2 sensing performance of p-type intermediate size porous silicon by a galvanostatic electrochemical etching method. Electrochimica Acta, 113. 354-360 doi:10.1016/j.electacta.2013.09.120
Plain TextLi, Mingda, Hu, Ming, Yan, Wenjun, Ma, Shuangyun, Zeng, Peng, Qin, Yuxiang (2013) NO2 sensing performance of p-type intermediate size porous silicon by a galvanostatic electrochemical etching method. Electrochimica Acta, 113. 354-360 doi:10.1016/j.electacta.2013.09.120
In(2013) Electrochimica Acta Vol. 113. Elsevier BV

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