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Capelli, Raffaella, Dinelli, Franco, Toffanin, Stefano, Todescato, Francesco, Murgia, Mauro, Muccini, Michele, Facchetti, Antonio, Marks, Tobin J. (2008) Investigation of the Optoelectronic Properties of Organic Light-Emitting Transistors Based on an Intrinsically Ambipolar Material. The Journal of Physical Chemistry C, 112 (33). 12993-12999 doi:10.1021/jp7118235

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of the Optoelectronic Properties of Organic Light-Emitting Transistors Based on an Intrinsically Ambipolar Material
JournalThe Journal of Physical Chemistry C
AuthorsCapelli, RaffaellaAuthor
Dinelli, FrancoAuthor
Toffanin, StefanoAuthor
Todescato, FrancescoAuthor
Murgia, MauroAuthor
Muccini, MicheleAuthor
Facchetti, AntonioAuthor
Marks, Tobin J.Author
Year2008 (August)Volume112
Issue33
PublisherAmerican Chemical Society (ACS)
DOIdoi:10.1021/jp7118235Search in ResearchGate
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Mindat Ref. ID3896169Long-form Identifiermindat:1:5:3896169:2
GUID0
Full ReferenceCapelli, Raffaella, Dinelli, Franco, Toffanin, Stefano, Todescato, Francesco, Murgia, Mauro, Muccini, Michele, Facchetti, Antonio, Marks, Tobin J. (2008) Investigation of the Optoelectronic Properties of Organic Light-Emitting Transistors Based on an Intrinsically Ambipolar Material. The Journal of Physical Chemistry C, 112 (33). 12993-12999 doi:10.1021/jp7118235
Plain TextCapelli, Raffaella, Dinelli, Franco, Toffanin, Stefano, Todescato, Francesco, Murgia, Mauro, Muccini, Michele, Facchetti, Antonio, Marks, Tobin J. (2008) Investigation of the Optoelectronic Properties of Organic Light-Emitting Transistors Based on an Intrinsically Ambipolar Material. The Journal of Physical Chemistry C, 112 (33). 12993-12999 doi:10.1021/jp7118235
In(2008, August) The Journal of Physical Chemistry C Vol. 112 (33) American Chemical Society (ACS)


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