Reference Type | Journal (article/letter/editorial) |
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Title | New Aspects on the Reduction of Nitric Acid during Wet Chemical Etching of Silicon in Concentrated HF/HNO3 Mixtures |
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Journal | The Journal of Physical Chemistry C |
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Authors | Steinert, M. | Author |
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Acker, J. | Author |
Wetzig, K. | Author |
Year | 2008 (September 11) | Volume | 112 |
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Issue | 36 |
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Publisher | American Chemical Society (ACS) |
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DOI | doi:10.1021/jp801937zSearch in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 3896360 | Long-form Identifier | mindat:1:5:3896360:9 |
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GUID | 0 |
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Full Reference | Steinert, M., Acker, J., Wetzig, K. (2008) New Aspects on the Reduction of Nitric Acid during Wet Chemical Etching of Silicon in Concentrated HF/HNO3 Mixtures. The Journal of Physical Chemistry C, 112 (36). 14139-14144 doi:10.1021/jp801937z |
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Plain Text | Steinert, M., Acker, J., Wetzig, K. (2008) New Aspects on the Reduction of Nitric Acid during Wet Chemical Etching of Silicon in Concentrated HF/HNO3 Mixtures. The Journal of Physical Chemistry C, 112 (36). 14139-14144 doi:10.1021/jp801937z |
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In | (2008, September) The Journal of Physical Chemistry C Vol. 112 (36) American Chemical Society (ACS) |
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