Reference Type | Journal (article/letter/editorial) |
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Title | Persistence time of charge carriers in defect states of molecular semiconductors |
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Journal | Physical Chemistry Chemical Physics |
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Authors | McMahon, David P. | Author |
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Troisi, Alessandro | Author |
Year | 2011 | Volume | 13 |
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Issue | 21 |
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Publisher | Royal Society of Chemistry (RSC) |
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DOI | doi:10.1039/c1cp20192aSearch in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 4015105 | Long-form Identifier | mindat:1:5:4015105:8 |
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GUID | 0 |
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Full Reference | McMahon, David P., Troisi, Alessandro (2011) Persistence time of charge carriers in defect states of molecular semiconductors. Physical Chemistry Chemical Physics, 13 (21). 10241pp. doi:10.1039/c1cp20192a |
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Plain Text | McMahon, David P., Troisi, Alessandro (2011) Persistence time of charge carriers in defect states of molecular semiconductors. Physical Chemistry Chemical Physics, 13 (21). 10241pp. doi:10.1039/c1cp20192a |
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In | (2011) Physical Chemistry Chemical Physics Vol. 13 (21) Royal Society of Chemistry (RSC) |
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