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Han, Sang Wook, Cha, Gi-Beom, Kim, Kyoo, Hong, Soon Cheol (2019) Hydrogen interaction with a sulfur-vacancy-induced occupied defect state in the electronic band structure of MoS2. Physical Chemistry Chemical Physics, 21 (28). 15302-15309 doi:10.1039/c9cp01030k

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Reference TypeJournal (article/letter/editorial)
TitleHydrogen interaction with a sulfur-vacancy-induced occupied defect state in the electronic band structure of MoS2
JournalPhysical Chemistry Chemical Physics
AuthorsHan, Sang WookAuthor
Cha, Gi-BeomAuthor
Kim, KyooAuthor
Hong, Soon CheolAuthor
Year2019Volume21
Issue28
PublisherRoyal Society of Chemistry (RSC)
DOIdoi:10.1039/c9cp01030kSearch in ResearchGate
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Mindat Ref. ID4037123Long-form Identifiermindat:1:5:4037123:6
GUID0
Full ReferenceHan, Sang Wook, Cha, Gi-Beom, Kim, Kyoo, Hong, Soon Cheol (2019) Hydrogen interaction with a sulfur-vacancy-induced occupied defect state in the electronic band structure of MoS2. Physical Chemistry Chemical Physics, 21 (28). 15302-15309 doi:10.1039/c9cp01030k
Plain TextHan, Sang Wook, Cha, Gi-Beom, Kim, Kyoo, Hong, Soon Cheol (2019) Hydrogen interaction with a sulfur-vacancy-induced occupied defect state in the electronic band structure of MoS2. Physical Chemistry Chemical Physics, 21 (28). 15302-15309 doi:10.1039/c9cp01030k
In(2019) Physical Chemistry Chemical Physics Vol. 21 (28) Royal Society of Chemistry (RSC)

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Han, Sang Wook, Cha, Gi-Beom, Kang, Manil, Lee, Jong Duk, Hong, Soon Cheol (2019) Hydrogen interaction with selectively desulfurized MoS2 surface using Ne+ sputtering. Journal of Applied Physics, 125 (8). 85102pp. doi:10.1063/1.5079281
Hwang, Young Hun, Yun, Won Seok, Cha, Gi-Beom, Hong, Soon Cheol, Han, Sang Wook (2019) Thermally driven homonuclear-stacking phase of MoS2 through desulfurization. Nanoscale, 11. 11138-11144 doi:10.1039/c9nr01369e
Han, Sang Wook, Cha, Gi-Beom, Frantzeskakis, Emmanouil, Razado-Colambo, Ivy, Avila, José, Park, Young S., Kim, Daehyun, Hwang, Jihoon, Kang, Jeong Soo, Ryu, Sunmin, Yun, Won Seok, Hong, Soon Cheol, Asensio, Maria C. (2012) Band-gap expansion in the surface-localized electronic structure of MoS2(0002) Physical Review B, 86 (11) doi:10.1103/physrevb.86.115105
Park, Youngsin, Li, Nannan, Lee, Geunsik, Kim, Kwang S., Kim, Ki-Jeong, Hong, Soon Cheol, Han, Sang Wook (2018) Sulfur-vacancy-dependent geometric and electronic structure of bismuth adsorbed on MoS2. Physical Review B, 97 (11) doi:10.1103/physrevb.97.115307
Han, Sang Wook, Cha, Gi-Beom, Park, Youngsin, Hong, S. C. (2017) Hydrogen physisorption based on the dissociative hydrogen chemisorption at the sulphur vacancy of MoS2 surface. Scientific Reports, 7. doi:10.1038/s41598-017-07178-9
Yun, Won Seok, Cha, Gi-Beom, Hong, Soon Cheol (2006) The electronic structure and magnetism of GdSi2 by first-principles study. Journal of Magnetism and Magnetic Materials, 304. doi:10.1016/j.jmmm.2006.02.033
Yun, Won Seok, Cha, Gi-Beom, Cho, Sunglae, Hong, Soon Cheol (2006) First-principles calculations on electronic structure and magnetism of β-Mn. Journal of Magnetism and Magnetic Materials, 304. doi:10.1016/j.jmmm.2006.02.071
Cho, Sunglae, Choi, Sungyoul, Cha, Gi-Beom, Hong, Soon Cheol, Park, Yongsup, Park, Hyun-Min, Kim, Yunki, Ketterson, John B. (2004) Electronic and magnetic properties of MnSnAs2. physica status solidi (b), 241 (7). 1462-1465 doi:10.1002/pssb.200304641
Choi, Woong, Cho, Mi Yeon, Konar, Aniruddha, Lee, Jong Hak, Cha, Gi-Beom, Hong, Soon Cheol, Kim, Sangsig, Kim, Jeongyong, Jena, Debdeep, Joo, Jinsoo, Kim, Sunkook (2012) Phototransistors: High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared (Adv. Mater. 43/2012). Advanced Materials, 24. 5902 doi:10.1002/adma.201290270
Han, Sang Wook, Yun, Won Seok, Cha, Gi-Beom, Seong, Seungho, Kim, Jong Chan, Jeong, Hu Young, Ahn, Chang Won, Fukutani, Keisuke, Stania, Roland, Kang, Jeongsoo (2025) Twist-Induced Dimensional Crossover and Topological Phase Transitions in Bismuthene Quasicrystals. Chemistry of Materials, 37 (6). doi:10.1021/acs.chemmater.5c00204
Cho, Sunglae, Choi, Sungyoul, Cha, Gi-Beom, Hong, Soon Cheol, Kim, Yunki, Zhao, Yu-Jun, Freeman, Arthur J., Ketterson, John B., Kim, B. J., Kim, Y. C., Choi, Byung-Chun (2002) Room-Temperature Ferromagnetism in(Zn1−xMnx)GeP2Semiconductors. Physical Review Letters, 88 (25). doi:10.1103/physrevlett.88.257203
 
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