Fu, Qiang, Halck, Niels Bendtsen, Hansen, Heine Anton, García Lastra, Juan Maria, Vegge, Tejs (2017) Computational Study of Nb-Doped-SnO2/Pt Interfaces: Dopant Segregation, Electronic Transport, and Catalytic Properties. Chemistry of Materials, 29. 1641-1649 doi:10.1021/acs.chemmater.6b04879
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Computational Study of Nb-Doped-SnO2/Pt Interfaces: Dopant Segregation, Electronic Transport, and Catalytic Properties | ||
Journal | Chemistry of Materials | ||
Authors | Fu, Qiang | Author | |
Halck, Niels Bendtsen | Author | ||
Hansen, Heine Anton | Author | ||
García Lastra, Juan Maria | Author | ||
Vegge, Tejs | Author | ||
Year | 2017 (February 28) | Volume | 29 |
Publisher | American Chemical Society (ACS) | ||
DOI | doi:10.1021/acs.chemmater.6b04879Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 4311169 | Long-form Identifier | mindat:1:5:4311169:9 |
GUID | 0 | ||
Full Reference | Fu, Qiang, Halck, Niels Bendtsen, Hansen, Heine Anton, García Lastra, Juan Maria, Vegge, Tejs (2017) Computational Study of Nb-Doped-SnO2/Pt Interfaces: Dopant Segregation, Electronic Transport, and Catalytic Properties. Chemistry of Materials, 29. 1641-1649 doi:10.1021/acs.chemmater.6b04879 | ||
Plain Text | Fu, Qiang, Halck, Niels Bendtsen, Hansen, Heine Anton, García Lastra, Juan Maria, Vegge, Tejs (2017) Computational Study of Nb-Doped-SnO2/Pt Interfaces: Dopant Segregation, Electronic Transport, and Catalytic Properties. Chemistry of Materials, 29. 1641-1649 doi:10.1021/acs.chemmater.6b04879 | ||
In | (2017) Chemistry of Materials Vol. 29. American Chemical Society (ACS) |
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