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Zeghouane, Mohammed, Avit, Geoffrey, Cornelius, Thomas W., Salomon, Damien, André, Yamina, Bougerol, Catherine, Taliercio, Thierry, Meguekam-Sado, Ariane, Ferret, Pierre, Castelluci, Dominique, Gil, Evelyne, Tournié, Eric, Thomas, Olivier, Trassoudaine, Agnès (2019) Selective growth of ordered hexagonal InN nanorods. CrystEngComm, 21. 2702-2708 doi:10.1039/c9ce00161a

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Reference TypeJournal (article/letter/editorial)
TitleSelective growth of ordered hexagonal InN nanorods
JournalCrystEngComm
AuthorsZeghouane, MohammedAuthor
Avit, GeoffreyAuthor
Cornelius, Thomas W.Author
Salomon, DamienAuthor
André, YaminaAuthor
Bougerol, CatherineAuthor
Taliercio, ThierryAuthor
Meguekam-Sado, ArianeAuthor
Ferret, PierreAuthor
Castelluci, DominiqueAuthor
Gil, EvelyneAuthor
Tournié, EricAuthor
Thomas, OlivierAuthor
Trassoudaine, AgnèsAuthor
Year2019Volume21
PublisherRoyal Society of Chemistry (RSC)
DOIdoi:10.1039/c9ce00161aSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID4454329Long-form Identifiermindat:1:5:4454329:3
GUID0
Full ReferenceZeghouane, Mohammed, Avit, Geoffrey, Cornelius, Thomas W., Salomon, Damien, André, Yamina, Bougerol, Catherine, Taliercio, Thierry, Meguekam-Sado, Ariane, Ferret, Pierre, Castelluci, Dominique, Gil, Evelyne, Tournié, Eric, Thomas, Olivier, Trassoudaine, Agnès (2019) Selective growth of ordered hexagonal InN nanorods. CrystEngComm, 21. 2702-2708 doi:10.1039/c9ce00161a
Plain TextZeghouane, Mohammed, Avit, Geoffrey, Cornelius, Thomas W., Salomon, Damien, André, Yamina, Bougerol, Catherine, Taliercio, Thierry, Meguekam-Sado, Ariane, Ferret, Pierre, Castelluci, Dominique, Gil, Evelyne, Tournié, Eric, Thomas, Olivier, Trassoudaine, Agnès (2019) Selective growth of ordered hexagonal InN nanorods. CrystEngComm, 21. 2702-2708 doi:10.1039/c9ce00161a
In(2019) CrystEngComm Vol. 21. Royal Society of Chemistry (RSC)

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Zeghouane, Mohammed, Avit, Geoffrey, André, Yamina, Taliercio, Thierry, Ferret, Pierre, Gil, Evelyne, Castelluci, Dominique, Disseix, Pierre, Leymarie, Joel, Tournié, Eric, Trassoudaine, Agnès (2020) Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy. Crystal Growth & Design, 20 (4) 2232-2239 doi:10.1021/acs.cgd.9b01346
Avit, Geoffrey, Zeghouane, Mohammed, André, Yamina, Castelluci, Dominique, Gil, Evelyne, Baé, Si-Young, Amano, Hiroshi, Trassoudaine, Agnès (2018) Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE. CrystEngComm, 20. 6207-6213 doi:10.1039/c8ce01177j
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Trassoudaine, Agnès, Roche, Elissa, Bougerol, Catherine, André, Yamina, Avit, Geoffrey, Monier, Guillaume, Ramdani, Mohammed Réda, Gil, Evelyne, Castelluci, Dominique, Dubrovskii, Vladimir G. (2016) Spontaneous formation of GaN/AlN core–shell nanowires on sapphire by hydride vapor phase epitaxy. Journal of Crystal Growth, 454. 1-5 doi:10.1016/j.jcrysgro.2016.08.031
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