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Hwang, In-Hui, Jin, Zhenlan, Park, Chang-In, Han, Sang-Wook (2017) The influence of structural disorder and phonon on metal-to-insulator transition of VO 2. Scientific Reports, 7. doi:10.1038/s41598-017-14235-w

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Reference TypeJournal (article/letter/editorial)
TitleThe influence of structural disorder and phonon on metal-to-insulator transition of VO 2
JournalScientific Reports
AuthorsHwang, In-HuiAuthor
Jin, ZhenlanAuthor
Park, Chang-InAuthor
Han, Sang-WookAuthor
Year2017 (December)Volume7
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1038/s41598-017-14235-wSearch in ResearchGate
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Mindat Ref. ID4693669Long-form Identifiermindat:1:5:4693669:1
GUID0
Full ReferenceHwang, In-Hui, Jin, Zhenlan, Park, Chang-In, Han, Sang-Wook (2017) The influence of structural disorder and phonon on metal-to-insulator transition of VO 2. Scientific Reports, 7. doi:10.1038/s41598-017-14235-w
Plain TextHwang, In-Hui, Jin, Zhenlan, Park, Chang-In, Han, Sang-Wook (2017) The influence of structural disorder and phonon on metal-to-insulator transition of VO 2. Scientific Reports, 7. doi:10.1038/s41598-017-14235-w
In(2017) Scientific Reports Vol. 7. Springer Science and Business Media LLC

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