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Du, Sichao, Burgess, Timothy, Gault, Baptiste, Gao, Qiang, Bao, Peite, Li, Li, Cui, Xiangyuan, Kong Yeoh, Wai, Liu, Hongwei, Yao, Lan, Ceguerra, Anna V., Hoe Tan, Hark, Jagadish, Chennupati, Ringer, Simon P., Zheng, Rongkun (2013) Quantitative dopant distributions in GaAs nanowires using atom probe tomography. Ultramicroscopy, 132. 186-192 doi:10.1016/j.ultramic.2013.02.012

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Reference TypeJournal (article/letter/editorial)
TitleQuantitative dopant distributions in GaAs nanowires using atom probe tomography
JournalUltramicroscopy
AuthorsDu, SichaoAuthor
Burgess, TimothyAuthor
Gault, BaptisteAuthor
Gao, QiangAuthor
Bao, PeiteAuthor
Li, LiAuthor
Cui, XiangyuanAuthor
Kong Yeoh, WaiAuthor
Liu, HongweiAuthor
Yao, LanAuthor
Ceguerra, Anna V.Author
Hoe Tan, HarkAuthor
Jagadish, ChennupatiAuthor
Ringer, Simon P.Author
Zheng, RongkunAuthor
Year2013 (September)Volume132
PublisherElsevier BV
DOIdoi:10.1016/j.ultramic.2013.02.012Search in ResearchGate
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Mindat Ref. ID4908372Long-form Identifiermindat:1:5:4908372:3
GUID0
Full ReferenceDu, Sichao, Burgess, Timothy, Gault, Baptiste, Gao, Qiang, Bao, Peite, Li, Li, Cui, Xiangyuan, Kong Yeoh, Wai, Liu, Hongwei, Yao, Lan, Ceguerra, Anna V., Hoe Tan, Hark, Jagadish, Chennupati, Ringer, Simon P., Zheng, Rongkun (2013) Quantitative dopant distributions in GaAs nanowires using atom probe tomography. Ultramicroscopy, 132. 186-192 doi:10.1016/j.ultramic.2013.02.012
Plain TextDu, Sichao, Burgess, Timothy, Gault, Baptiste, Gao, Qiang, Bao, Peite, Li, Li, Cui, Xiangyuan, Kong Yeoh, Wai, Liu, Hongwei, Yao, Lan, Ceguerra, Anna V., Hoe Tan, Hark, Jagadish, Chennupati, Ringer, Simon P., Zheng, Rongkun (2013) Quantitative dopant distributions in GaAs nanowires using atom probe tomography. Ultramicroscopy, 132. 186-192 doi:10.1016/j.ultramic.2013.02.012
In(2013) Ultramicroscopy Vol. 132. Elsevier BV

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