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Tu, Y., Takamizawa, H., Han, B., Shimizu, Y., Inoue, K., Toyama, T., Yano, F., Nishida, A., Nagai, Y. (2017) Influence of laser power on atom probe tomographic analysis of boron distribution in silicon. Ultramicroscopy, 173. 58-63 doi:10.1016/j.ultramic.2016.11.023

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of laser power on atom probe tomographic analysis of boron distribution in silicon
JournalUltramicroscopy
AuthorsTu, Y.Author
Takamizawa, H.Author
Han, B.Author
Shimizu, Y.Author
Inoue, K.Author
Toyama, T.Author
Yano, F.Author
Nishida, A.Author
Nagai, Y.Author
Year2017 (February)Volume173
PublisherElsevier BV
DOIdoi:10.1016/j.ultramic.2016.11.023Search in ResearchGate
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Mindat Ref. ID4910588Long-form Identifiermindat:1:5:4910588:5
GUID0
Full ReferenceTu, Y., Takamizawa, H., Han, B., Shimizu, Y., Inoue, K., Toyama, T., Yano, F., Nishida, A., Nagai, Y. (2017) Influence of laser power on atom probe tomographic analysis of boron distribution in silicon. Ultramicroscopy, 173. 58-63 doi:10.1016/j.ultramic.2016.11.023
Plain TextTu, Y., Takamizawa, H., Han, B., Shimizu, Y., Inoue, K., Toyama, T., Yano, F., Nishida, A., Nagai, Y. (2017) Influence of laser power on atom probe tomographic analysis of boron distribution in silicon. Ultramicroscopy, 173. 58-63 doi:10.1016/j.ultramic.2016.11.023
In(2017) Ultramicroscopy Vol. 173. Elsevier BV

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