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Bullough, R., Newman, R. C., Wakefield, J., Willis, J. B. (1960) Precipitation in Silicon Crystals Containing Aluminum. Journal of Applied Physics, 31 (4). 707-714 doi:10.1063/1.1735673

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Reference TypeJournal (article/letter/editorial)
TitlePrecipitation in Silicon Crystals Containing Aluminum
JournalJournal of Applied Physics
AuthorsBullough, R.Author
Newman, R. C.Author
Wakefield, J.Author
Willis, J. B.Author
Year1960 (April)Volume31
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.1735673
Generate Citation Formats
Mindat Ref. ID4920279Long-form Identifiermindat:1:5:4920279:9
GUID0
Full ReferenceBullough, R., Newman, R. C., Wakefield, J., Willis, J. B. (1960) Precipitation in Silicon Crystals Containing Aluminum. Journal of Applied Physics, 31 (4). 707-714 doi:10.1063/1.1735673
Plain TextBullough, R., Newman, R. C., Wakefield, J., Willis, J. B. (1960) Precipitation in Silicon Crystals Containing Aluminum. Journal of Applied Physics, 31 (4). 707-714 doi:10.1063/1.1735673
In(1960, April) Journal of Applied Physics Vol. 31 (4) AIP Publishing

See Also

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BULLOUGH, R., NEWMAN, R. C., WAKEFIELD, J., WILLIS, J. B. (1959) Precipitation on a Dislocation. Nature, 183 (4653). 34-35 doi:10.1038/183034a0
Gosling, T. J., Bullough, R., Jain, S. C., Willis, J. R. (1993) Misfit dislocation distributions in capped (buried) strained semiconductor layers. Journal of Applied Physics, 73 (12). 8267-8278 doi:10.1063/1.353445
Gosling, T. J., Willis, J. R., Bullough, R., Jain, S. C. (1993) The energetics of dislocation array stability in strained epitaxial layers. Journal of Applied Physics, 73 (12). 8297-8303 doi:10.1063/1.354087
Stein, Dale F., Low, J. R. (1960) Mobility of Edge Dislocations in Silicon‐Iron Crystals. Journal of Applied Physics, 31 (2). 362-369 doi:10.1063/1.1735574
Willis, J. R., Jain, S. C., Bullough, R. (1991) Work hardening and strain relaxation in strained‐layer buffers. Applied Physics Letters, 59 (8). 920-922 doi:10.1063/1.106301
Oates, A. S., Newman, R. C., Woolley, R., Davies, G., Lightowlers, E. C., Binns, M. J., Wilkes, J. G. (1985) Determination of low levels of carbon in Czochralski silicon. Applied Physics Letters, 47 (7). 705-707 doi:10.1063/1.96065
Bullough, R, Newman, R C, Wakefield, J (1958) Diffusion across a Semiconductor-Vapour Interface. Proceedings of the Physical Society, 72 (3). 369-379 doi:10.1088/0370-1328/72/3/307
Binns, M. J., Brown, W. P., Wilkes, J. G., Newman, R. C., Livingston, F. M., Messoloras, S., Stewart, R. J. (1983) Diffusion limited precipitation of oxygen in dislocation‐free silicon. Applied Physics Letters, 42 (6). 525-527 doi:10.1063/1.93992
Gossick, B. R. (1960) Transistor with Base Containing a Dispersed Colloidal Phase. Journal of Applied Physics, 31 (4). 745 doi:10.1063/1.1735692
Wagner, J., Newman, R. C., Roberts, C. (1995) Silicon incorporation in GaAs: From delta‐doping to monolayer insertion. Journal of Applied Physics, 78 (4). 2431-2434 doi:10.1063/1.360165
Frank, R. C., Thomas, J. E. (1960) Germanium Crystals Grown from Hollow Cylindrical Seeds. Journal of Applied Physics, 31 (9). 1689-1690 doi:10.1063/1.1735922
 
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