Reference Type | Journal (article/letter/editorial) |
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Title | Model for the Electronic Transport Properties of Mixed Valency Semiconductors |
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Journal | Journal of Applied Physics |
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Authors | Miller, R. C. | Author |
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Heikes, R. R. | Author |
Mazelsky, R. | Author |
Year | 1961 (October) | Volume | 32 |
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Issue | 10 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.1777043Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 4922014 | Long-form Identifier | mindat:1:5:4922014:8 |
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GUID | 0 |
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Full Reference | Miller, R. C., Heikes, R. R., Mazelsky, R. (1961) Model for the Electronic Transport Properties of Mixed Valency Semiconductors. Journal of Applied Physics, 32 (10). 2202-2206 doi:10.1063/1.1777043 |
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Plain Text | Miller, R. C., Heikes, R. R., Mazelsky, R. (1961) Model for the Electronic Transport Properties of Mixed Valency Semiconductors. Journal of Applied Physics, 32 (10). 2202-2206 doi:10.1063/1.1777043 |
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In | (1961, October) Journal of Applied Physics Vol. 32 (10) AIP Publishing |
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