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Spitzer, W. G., Mead, C. A. (1963) Barrier Height Studies on Metal‐Semiconductor Systems. Journal of Applied Physics, 34 (10). 3061-3069 doi:10.1063/1.1729121

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Reference TypeJournal (article/letter/editorial)
TitleBarrier Height Studies on Metal‐Semiconductor Systems
JournalJournal of Applied Physics
AuthorsSpitzer, W. G.Author
Mead, C. A.Author
Year1963 (October)Volume34
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.1729121Search in ResearchGate
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Mindat Ref. ID4927094Long-form Identifiermindat:1:5:4927094:9
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Full ReferenceSpitzer, W. G., Mead, C. A. (1963) Barrier Height Studies on Metal‐Semiconductor Systems. Journal of Applied Physics, 34 (10). 3061-3069 doi:10.1063/1.1729121
Plain TextSpitzer, W. G., Mead, C. A. (1963) Barrier Height Studies on Metal‐Semiconductor Systems. Journal of Applied Physics, 34 (10). 3061-3069 doi:10.1063/1.1729121
In(1963, October) Journal of Applied Physics Vol. 34 (10) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Mead, C. A., Spitzer, W. G. (1963) Fermi Level Position at Semiconductor Surfaces. Physical Review Letters, 10 (11). 471-472 doi:10.1103/physrevlett.10.471
Goodman, Alvin M. (1963) Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier System. Journal of Applied Physics, 34 (2). 329-338 doi:10.1063/1.1702608
Cowley, A. M., Sze, S. M. (1965) Surface States and Barrier Height of Metal‐Semiconductor Systems. Journal of Applied Physics, 36 (10). 3212-3220 doi:10.1063/1.1702952
Mead, C. A., Spitzer, W. G. (1963) PHOTOEMISSION FROM Au AND Cu INTO CdS. Applied Physics Letters, 2 (4). 74-75 doi:10.1063/1.1753781
Guinet, C. (1974) New method of determination of a metal‐semiconductor barrier height. Applied Physics Letters, 25 (10). 600-602 doi:10.1063/1.1655327
Lee, Y. S., Anderson, W. A. (1989) High‐barrier height metal‐insulator‐semiconductor diodes onn‐InP. Journal of Applied Physics, 65 (10). 4051-4056 doi:10.1063/1.343331
Lewicki, G. W., Mead, C. A. (1966) VOLTAGE DEPENDENCE OF BARRIER HEIGHT IN AlN TUNNEL JUNCTIONS. Applied Physics Letters, 8 (4). 98-99 doi:10.1063/1.1754505
Mead, C. A., Spitzer, W. G. (1964) Fermi Level Position at Metal-Semiconductor Interfaces. Physical Review, 134 (3). doi:10.1103/physrev.134.a713
Smith, S. R., Evwaraye, A. O., Mitchel, W. C. (1996) Temperature dependence of the barrier height of metal‐semiconductor contacts on 6H‐SiC. Journal of Applied Physics, 79 (1). 301-304 doi:10.1063/1.360944
Pruniaux, B. R., Adams, A. C. (1972) Dependence of Barrier Height of Metal Semiconductor Contact (Au–GaAs) on Thickness of Semiconductor Surface Layer. Journal of Applied Physics, 43 (4). 1980-1982 doi:10.1063/1.1661426
Spitzer, M., Shewchun, J., Burk, D. (1980) The operation of the semiconductor‐insulator‐semiconductor solar cell: Barrier height lowering through interface states. Journal of Applied Physics, 51 (12). 6399-6404 doi:10.1063/1.327584
 
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