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Schwuttke, G. H., Sils, V. (1963) X‐Ray Analysis of Stacking Fault Structures in Epitaxially Grown Silicon. Journal of Applied Physics, 34 (10). 3127-3134 doi:10.1063/1.1729133

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Reference TypeJournal (article/letter/editorial)
TitleX‐Ray Analysis of Stacking Fault Structures in Epitaxially Grown Silicon
JournalJournal of Applied Physics
AuthorsSchwuttke, G. H.Author
Sils, V.Author
Year1963 (October)Volume34
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.1729133Search in ResearchGate
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Mindat Ref. ID4927129Long-form Identifiermindat:1:5:4927129:4
GUID0
Full ReferenceSchwuttke, G. H., Sils, V. (1963) X‐Ray Analysis of Stacking Fault Structures in Epitaxially Grown Silicon. Journal of Applied Physics, 34 (10). 3127-3134 doi:10.1063/1.1729133
Plain TextSchwuttke, G. H., Sils, V. (1963) X‐Ray Analysis of Stacking Fault Structures in Epitaxially Grown Silicon. Journal of Applied Physics, 34 (10). 3127-3134 doi:10.1063/1.1729133
In(1963, October) Journal of Applied Physics Vol. 34 (10) AIP Publishing

See Also

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Schwuttke, G. H., Sils, V. (1963) Erratum: X‐Ray Analysis of Stacking Fault Structures in Epitaxially Grown Silicon. Journal of Applied Physics, 34 (11). 3420 doi:10.1063/1.1729219
Booker, G. R., Stickler, R. (1963) ORIGIN OF STACKING FAULT IN EPITAXIALLY GROWN SILICON. Applied Physics Letters, 3 (9). 158-160 doi:10.1063/1.1753912
Booker, G. R., Howie, A. (1963) INTRINSIC‐EXTRINSIC STACKING‐FAULT PAIRS IN EPITAXIALLY GROWN SILICON LAYERS. Applied Physics Letters, 3 (9). 156-157 doi:10.1063/1.1753911
Schwuttke, G. H. (1963) Boron‐Induced Microstrains in Dislocation‐Free Silicon Crystals. Journal of Applied Physics, 34 (6). 1662-1664 doi:10.1063/1.1702652
Schwuttke, G. H. (1962) X‐Ray Observations of Partial Dislocations in Epitaxial Silicon Films. Journal of Applied Physics, 33 (4). 1538-1540 doi:10.1063/1.1728768
Schwuttke, G. H., Queisser, H. J. (1962) X‐Ray Observations of Diffusion‐Induced Dislocations in Silicon. Journal of Applied Physics, 33 (4). 1540-1542 doi:10.1063/1.1728769
Wilhelm, F. J., Joshi, M. L. (1966) Observation of ``Dwarf'' Stacking‐Fault Tetrahedra Not Reaching the Surface in Epitaxially Grown Silicon. Journal of Applied Physics, 37 (4). 1933-1934 doi:10.1063/1.1708631
Schwuttke, G. H., Rupprecht, H. (1966) X‐Ray Analysis of Diffusion‐Induced Defects in Gallium Arsenide. Journal of Applied Physics, 37 (1). 167-173 doi:10.1063/1.1707800
Finch, R. H., Queisser, H. J., Thomas, G., Washburn, J. (1963) Erratum: Structure and Origin of Stacking Faults in Epitaxial Silicon. Journal of Applied Physics, 34 (10). 3153-3154 doi:10.1063/1.1729152
Schwuttke, G. H., Howard, J. K. (1968) X‐Ray Stress Topography of Thin Films on Germanium and Silicon. Journal of Applied Physics, 39 (3). 1581-1591 doi:10.1063/1.1656399
Washburn, J., Thomas, G., Queisser, H. J. (1963) EXTRINSIC‐INTRINSIC STACKING‐FAULT PAIRS IN EPITAXIAL SILICON. Applied Physics Letters, 3 (3). 44-45 doi:10.1063/1.1723567
 
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