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Turner, W. J., Pettit, G. D., Ainslie, N. G. (1963) Luminescence of GaAs Grown in Oxygen. Journal of Applied Physics, 34 (11). 3274-3276 doi:10.1063/1.1729176

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Reference TypeJournal (article/letter/editorial)
TitleLuminescence of GaAs Grown in Oxygen
JournalJournal of Applied Physics
AuthorsTurner, W. J.Author
Pettit, G. D.Author
Ainslie, N. G.Author
Year1963 (November)Volume34
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.1729176Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID4927263Long-form Identifiermindat:1:5:4927263:7
GUID0
Full ReferenceTurner, W. J., Pettit, G. D., Ainslie, N. G. (1963) Luminescence of GaAs Grown in Oxygen. Journal of Applied Physics, 34 (11). 3274-3276 doi:10.1063/1.1729176
Plain TextTurner, W. J., Pettit, G. D., Ainslie, N. G. (1963) Luminescence of GaAs Grown in Oxygen. Journal of Applied Physics, 34 (11). 3274-3276 doi:10.1063/1.1729176
In(1963, November) Journal of Applied Physics Vol. 34 (11) AIP Publishing

See Also

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Woods, J. F., Ainslie, N. G. (1963) Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal Growth. Journal of Applied Physics, 34 (5). 1469-1475 doi:10.1063/1.1729602
Turner, W. J., Pettit, G. D. (1963) Erratum: PHOTOINDUCED RECOMBINATION RADIATION IN InP. Applied Physics Letters, 3 (9). 171 doi:10.1063/1.1753918
Turner, W. J., Pettit, G. D. (1963) PHOTOINDUCED RECOMBINATION RADIATION IN InP DIODES. Applied Physics Letters, 3 (6). 102-104 doi:10.1063/1.1753884
Pettit, G. D., Turner, W. J. (1965) Refractive Index of InP. Journal of Applied Physics, 36 (6). 2081 doi:10.1063/1.1714410
Fenner, G. E., Kingsley, J. D. (1963) Spatial Distribution of Radiation from GaAs Lasers. Journal of Applied Physics, 34 (11). 3204-3208 doi:10.1063/1.1729164
Wilson, G. V. H. (1963) Modulation Broadening of NMR and ESR Line Shapes. Journal of Applied Physics, 34 (11). 3276-3285 doi:10.1063/1.1729177
Schwartz, G. P., Griffiths, J. E., DiStefano, D., Gualtieri, G. J., Schwartz, B. (1979) Arsenic incorporation in native oxides of GaAs grown thermally under arsenic trioxide vapor. Applied Physics Letters, 34 (11). 742-744 doi:10.1063/1.90656
Feenstra, R. M., Vaterlaus, A., Woodall, J. M., Pettit, G. D. (1993) Tunneling spectroscopy of midgap states induced by arsenic precipitates in low‐temperature‐grown GaAs. Applied Physics Letters, 63 (18). 2528-2530 doi:10.1063/1.110448
Kirchner, P. D., Woodall, J. M., Freeouf, J. L., Pettit, G. D. (1981) Volatile metal‐oxide incorporation in layers of GaAs, Ga1−xAlxAs and related compounds grown by molecular beam epitaxy. Applied Physics Letters, 38 (6). 427-429 doi:10.1063/1.92384
Fitzgerald, E. A., Ast, D. G., Kirchner, P. D., Pettit, G. D., Woodall, J. M. (1988) Structure and recombination in InGaAs/GaAs heterostructures. Journal of Applied Physics, 63 (3). 693-703 doi:10.1063/1.340059
Stringfellow, G. B., Hom, G. (1979) Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE. Applied Physics Letters, 34 (11). 794-796 doi:10.1063/1.90647
 
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