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Geppert, D. V. (1963) Theoretical Shape of Metal‐Insulator‐Metal Potential Barriers. Journal of Applied Physics, 34 (3). 490-493 doi:10.1063/1.1729300

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Reference TypeJournal (article/letter/editorial)
TitleTheoretical Shape of Metal‐Insulator‐Metal Potential Barriers
JournalJournal of Applied Physics
AuthorsGeppert, D. V.Author
Year1963 (March)Volume34
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.1729300Search in ResearchGate
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Mindat Ref. ID4927751Long-form Identifiermindat:1:5:4927751:7
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Full ReferenceGeppert, D. V. (1963) Theoretical Shape of Metal‐Insulator‐Metal Potential Barriers. Journal of Applied Physics, 34 (3). 490-493 doi:10.1063/1.1729300
Plain TextGeppert, D. V. (1963) Theoretical Shape of Metal‐Insulator‐Metal Potential Barriers. Journal of Applied Physics, 34 (3). 490-493 doi:10.1063/1.1729300
In(1963, March) Journal of Applied Physics Vol. 34 (3) AIP Publishing

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Geppert, D. V. (1964) Experimental Determination of the Shape of Metal—Insulator—Metal Potential Barriers. Journal of Applied Physics, 35 (7). 2151 doi:10.1063/1.1702806
Geppert, D. V., Cowley, A. M., Dore, B. V. (1966) Correlation of Metal‐Semiconductor Barrier Height and Metal Work Function; Effects of Surface States. Journal of Applied Physics, 37 (6). 2458-2467 doi:10.1063/1.1708837
Dore, B. V., Geppert, D. V., Muller, R. S., Spicer, W. E. (1967) Electron Emission from Metal‐BaO Systems. Journal of Applied Physics, 38 (8). 3353-3360 doi:10.1063/1.1710112
Donald, D. K. (1963) Experiments on Mercury‐Silicon Surface Barriers. Journal of Applied Physics, 34 (6). 1758-1762 doi:10.1063/1.1702674
Henisch, H. K., Manifacier, J.‐C., Callarotti, R. C., Schmidt, P. E. (1980) Space‐charge controlled conduction in thick metal‐insulator‐metal barriers. Journal of Applied Physics, 51 (7). 3790-3793 doi:10.1063/1.328116
Goldenblum, A., Oprea, A., Bogatu, V. (1994) Time behavior of currents in ZnS:Mn metal‐insulator‐semiconductor‐insulator‐metal structures. Journal of Applied Physics, 75 (10). 5177-5185 doi:10.1063/1.355765
Bordo, V. G. (2023) Self-excitation of radio waves in the metal–insulator–metal structure doped with metal nanowires. Journal of Applied Physics, 133 (1) 14301 doi:10.1063/5.0127049
Simmons, John G., Unterkofler, George J. (1963) Potential Barrier Shape Determination in Tunnel Junctions. Journal of Applied Physics, 34 (6). 1828-1830 doi:10.1063/1.1702693
Nibler, Ferdinand (1963) Some Properties of Ohmic Metal‐Semiconductor Contacts. Journal of Applied Physics, 34 (5). 1572 doi:10.1063/1.1729690
Kleider, J. P., Mencaraglia, D. (1995) Theoretical study of the quasistatic capacitance of metal–insulator–semiconductor structures in amorphous semiconductors. Journal of Applied Physics, 78 (6). 3857-3866 doi:10.1063/1.359902
Holden, Konner E. K., Qi, Yitong, Conley, John F. (2021) Precision defect engineering of metal/insulator/metal diodes using atomic layer deposition to localize Ni impurities in Al2O3 tunnel barriers. Journal of Applied Physics, 129 (14) 144502pp. doi:10.1063/5.0045721
 
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