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Jonath, Arthur D., Voronkov, Edward, Bube, Richard H. (1975) Extrinsic electroabsorption in high−resistivity GaAs. Journal of Applied Physics, 46 (4). 1754-1766 doi:10.1063/1.321781

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Reference TypeJournal (article/letter/editorial)
TitleExtrinsic electroabsorption in high−resistivity GaAs
JournalJournal of Applied Physics
AuthorsJonath, Arthur D.Author
Voronkov, EdwardAuthor
Bube, Richard H.Author
Year1975 (April)Volume46
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.321781Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID4985013Long-form Identifiermindat:1:5:4985013:4
GUID0
Full ReferenceJonath, Arthur D., Voronkov, Edward, Bube, Richard H. (1975) Extrinsic electroabsorption in high−resistivity GaAs. Journal of Applied Physics, 46 (4). 1754-1766 doi:10.1063/1.321781
Plain TextJonath, Arthur D., Voronkov, Edward, Bube, Richard H. (1975) Extrinsic electroabsorption in high−resistivity GaAs. Journal of Applied Physics, 46 (4). 1754-1766 doi:10.1063/1.321781
In(1975, April) Journal of Applied Physics Vol. 46 (4) AIP Publishing

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Voronkov, Edward, Jonath, Arthur D., Arnoldussen, Thomas C., Bube, Richard H. (1974) Extrinsic electroabsorption of amorphous As2SeTe2. Journal of Non-Crystalline Solids, 15 (2) 275-278 doi:10.1016/0022-3093(74)90054-4
Lin, Alice L., Bube, Richard H. (1975) Effects of heat treatment and plastic deformation on the photoelectronic properties of high‐resistivity GaAs : Cr. Journal of Applied Physics, 46 (12). 5302-5304 doi:10.1063/1.321564
Jonath, A.D., Bube, R.H. (1973) Impurity state electroabsorption studies in oxygen-doped GaAs. Surface Science, 37. 167-174 doi:10.1016/0039-6028(73)90315-4
Bube, Richard H. (1960) Photoelectronic Analysis of High Resistivity Crystals: (a) GaAs, (b) Sb2S3. Journal of Applied Physics, 31 (2). 315-322 doi:10.1063/1.1735564
Lin, Alice L., Bube, Richard H. (1976) Photoelectronic properties of high‐resistivity GaAs : Cr. Journal of Applied Physics, 47 (5). 1859-1867 doi:10.1063/1.322905
Lin, Alice L., Omelianovski, Eric, Bube, Richard H. (1976) Photoelectronic properties of high‐resistivity GaAs : O. Journal of Applied Physics, 47 (5). 1852-1858 doi:10.1063/1.322904
Blanc, Joseph, Bube, Richard H., MacDonald, Harold E. (1961) Properties of High‐Resistivity Gallium Arsenide Compensated with Diffused Copper. Journal of Applied Physics, 32 (9). 1666-1679 doi:10.1063/1.1728416
Tyler, E. H., Jaros, M., Penchina, Claude M. (1977) Extrinsic photoconductivity in high‐resistivity GaAs doped with oxygen. Applied Physics Letters, 31 (3). 208-210 doi:10.1063/1.89650
Robinson, Arthur L., Bube, Richard H. (1971) Photoelectronic Properties of Defects in CdSe Single Crystals. Journal of Applied Physics, 42 (13). 5280-5295 doi:10.1063/1.1659937
Aranovich, Julio, Fahrenbruch, Alan L., Bube, Richard H. (1978) High conductivity ZnSe films. Journal of Applied Physics, 49 (4). 2584pp. doi:10.1063/1.325074
Blount, George H., Preis, Mark K., Yamada, Robert T., Bube, Richard H. (1975) Photoconductive properties of chemically deposited PbS with dielectric overcoatings. Journal of Applied Physics, 46 (8). 3489-3499 doi:10.1063/1.322075
 
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