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Moore, Arnold R. (1983) Theory and experiment on the surface‐photovoltage diffusion‐length measurement as applied to amorphous silicon. Journal of Applied Physics, 54 (1). 222-228 doi:10.1063/1.331745

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Reference TypeJournal (article/letter/editorial)
TitleTheory and experiment on the surface‐photovoltage diffusion‐length measurement as applied to amorphous silicon
JournalJournal of Applied Physics
AuthorsMoore, Arnold R.Author
Year1983 (January)Volume54
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.331745Search in ResearchGate
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Mindat Ref. ID5016103Long-form Identifiermindat:1:5:5016103:6
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Full ReferenceMoore, Arnold R. (1983) Theory and experiment on the surface‐photovoltage diffusion‐length measurement as applied to amorphous silicon. Journal of Applied Physics, 54 (1). 222-228 doi:10.1063/1.331745
Plain TextMoore, Arnold R. (1983) Theory and experiment on the surface‐photovoltage diffusion‐length measurement as applied to amorphous silicon. Journal of Applied Physics, 54 (1). 222-228 doi:10.1063/1.331745
In(1983, January) Journal of Applied Physics Vol. 54 (1) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Moore, A. R., Kane, D. E. (1984) Intensity dependence of diffusion length in amorphous silicon by surface photovoltage measurements. Journal of Applied Physics, 56 (10). 2796-2802 doi:10.1063/1.333812
Moore, A. R., Lin, Hong‐sheng (1987) Improvement in the surface photovoltage method of determining diffusion length in thin films of hydrogenated amorphous silicon. Journal of Applied Physics, 61 (10). 4816-4819 doi:10.1063/1.338345
Faughnan, Brian, Moore, Arnold, Crandall, Richard (1984) Relationship between collection length and diffusion length in amorphous silicon. Applied Physics Letters, 44 (6). 613-615 doi:10.1063/1.94852
Anttila, O. J., Hahn, S. K. (1993) Study on surface photovoltage measurement of long diffusion length silicon: Simulation results. Journal of Applied Physics, 74 (1). 558-569 doi:10.1063/1.355343
Moore, A. R., Lin, Hong‐sheng (1987) The determination of diffusion length and surface barrier width from surface photovoltage measurements in CdSe and amorphous Si films. Journal of Applied Physics, 61 (12). 5366-5368 doi:10.1063/1.338275
Epstein, K. A., Tran, N. T., Jeffrey, F. R., Moore, A. R. (1986) Surface photovoltage measurement of light instability of amorphous silicon films. Applied Physics Letters, 49 (3). 173-175 doi:10.1063/1.97215
Moore, Arnold R. (1982) Collection length of holes in a‐Si:H by surface photovoltage using a liquid Schottky barrier. Applied Physics Letters, 40 (5). 403-405 doi:10.1063/1.93118
Fair, R. B. (1983) The effects of impurity diffusion and surface damage on oxygen precipitation in silicon. Journal of Applied Physics, 54 (1). 388-391 doi:10.1063/1.331714
Schwarz, R., Slobodin, D., Wagner, S. (1985) Differential surface photovoltage measurement of minority‐carrier diffusion length in thin films. Applied Physics Letters, 47 (7). 740-742 doi:10.1063/1.96023
McElheny, P. J., Arch, J. K., Fonash, S. J. (1987) Assessment of the surface‐photovoltage diffusion‐length measurement. Applied Physics Letters, 51 (20). 1611-1613 doi:10.1063/1.98571
Li, Sheng S. (1976) Determination of minority‐carrier diffusion length in indium phosphide by surface photovoltage measurement. Applied Physics Letters, 29 (2). 126-127 doi:10.1063/1.88966
 
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