Wilson, S. R., Paulson, W. M., Gregory, R. B., Tam, G., White, C. W., Appleton, B. R., Rai, A. K., Pronko, P. P. (1983) Thermal stability of electrically active dopants in laser annealed silicon films. Journal of Applied Physics, 54 (9). 5004-5013 doi:10.1063/1.332768

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Reference Type	Journal (article/letter/editorial)
Title	Thermal stability of electrically active dopants in laser annealed silicon films
Journal	Journal of Applied Physics
Authors	Wilson, S. R.		Author
	Paulson, W. M.		Author
	Gregory, R. B.		Author
	Tam, G.		Author
	White, C. W.		Author
	Appleton, B. R.		Author
	Rai, A. K.		Author
	Pronko, P. P.		Author
Year	1983 (September)	Volume	54
Issue	9
Publisher	AIP Publishing
DOI	doi:10.1063/1.332768Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	5018304	Long-form Identifier	mindat:1:5:5018304:7
GUID	0
Full Reference	Wilson, S. R., Paulson, W. M., Gregory, R. B., Tam, G., White, C. W., Appleton, B. R., Rai, A. K., Pronko, P. P. (1983) Thermal stability of electrically active dopants in laser annealed silicon films. Journal of Applied Physics, 54 (9). 5004-5013 doi:10.1063/1.332768
Plain Text	Wilson, S. R., Paulson, W. M., Gregory, R. B., Tam, G., White, C. W., Appleton, B. R., Rai, A. K., Pronko, P. P. (1983) Thermal stability of electrically active dopants in laser annealed silicon films. Journal of Applied Physics, 54 (9). 5004-5013 doi:10.1063/1.332768
In	(1983, September) Journal of Applied Physics Vol. 54 (9) AIP Publishing

	White, C. W., Christie, W. H., Appleton, B. R., Wilson, S. R., Pronko, P. P., Magee, C. W. (1978) Redistribution of dopants in ion‐implanted silicon by pulsed‐laser annealing. Applied Physics Letters, 33 (7). 662-664 doi:10.1063/1.90456
	White, C. W., Pronko, P. P., Wilson, S. R., Appleton, B. R., Narayan, J., Young, R. T. (1979) Effects of pulsed ruby‐laser annealing on As and Sb implanted silicon. Journal of Applied Physics, 50 (5). 3261-3273 doi:10.1063/1.326366
	*Bhattacharya, R. S., Rai, A. K., Yeo, Y. K., Pronko, P. P., Ling, S. C., Wilson, S. R., Park, Y. S. (1983) Si implantation in GaAs. Journal of Applied Physics, 54 (5). 2329-2337 doi:10.1063/1.332344*
	*Larson, B. C., White, C. W., Appleton, B. R. (1978) Unidirectional contraction in boron‐implanted laser‐annealed silicon. Applied Physics Letters, 32 (12). 801-803 doi:10.1063/1.89936*
	White, C. W., Wilson, S. R., Appleton, B. R., Young, F. W. (1980) Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group‐III and group‐V dopants in silicon. Journal of Applied Physics, 51 (1). 738-749 doi:10.1063/1.327334
	*Pronko, P. P., Rai, A. K., Holland, O. W., Appleton, B. R., Narayan, J. (1982) The material state of ion‐implanted Cr in GaAs. Journal of Applied Physics, 53 (8). 5621-5629 doi:10.1063/1.331444*
	Wilson, S. R., Paulson, W. M., Gregory, R. B., Hamdi, A. H., McDaniel, F. D. (1984) Rapid isothermal annealing of As‐, P‐, and B‐implanted silicon. Journal of Applied Physics, 55 (12). 4162-4170 doi:10.1063/1.333034
	Krause, S. J., Wilson, S. R., Paulson, W. M., Gregory, R. B. (1984) Grain growth during transient annealing of As‐implanted polycrystalline silicon films. Applied Physics Letters, 45 (7). 778-780 doi:10.1063/1.95401
	*White, C. W., Narayan, J., Appleton, B. R., Wilson, S. R. (1979) Impurity segregation by pulsed laser irradiation. Journal of Applied Physics, 50 (4). 2967-2969 doi:10.1063/1.326176*
	Wilson, S. R., Appleton, B. R., White, C. W., Narayan, J., Greenwald, A. C. (1979) Comparison of Pulsed Electron Beam-Annealed and Pulsed Ruby Laser-Annealed Ion-Implanted Silicon. IEEE Transactions on Nuclear Science, 26 (1) 1693-1696 doi:10.1109/tns.1979.4330464
	Rai, A. K., Bhattacharya, R. S., Pronko, P. P., Ling, S. C. (1983) Argon implantation in GaAs: Damage and lattice site location analyses. Journal of Applied Physics, 54 (5). 2307-2311 doi:10.1063/1.332387

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Wilson, S. R., Paulson, W. M., Gregory, R. B., Tam, G., White, C. W., Appleton, B. R., Rai, A. K., Pronko, P. P. (1983) Thermal stability of electrically active dopants in laser annealed silicon films. Journal of Applied Physics, 54 (9). 5004-5013 doi:10.1063/1.332768

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