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Asano, Tanemasa, Ishiwara, Hiroshi (1984) Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature. Journal of Applied Physics, 55 (10). 3566-3570 doi:10.1063/1.332947

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature
JournalJournal of Applied Physics
AuthorsAsano, TanemasaAuthor
Ishiwara, HiroshiAuthor
Year1984 (May 15)Volume55
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.332947Search in ResearchGate
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Mindat Ref. ID5018654Long-form Identifiermindat:1:5:5018654:9
GUID0
Full ReferenceAsano, Tanemasa, Ishiwara, Hiroshi (1984) Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature. Journal of Applied Physics, 55 (10). 3566-3570 doi:10.1063/1.332947
Plain TextAsano, Tanemasa, Ishiwara, Hiroshi (1984) Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature. Journal of Applied Physics, 55 (10). 3566-3570 doi:10.1063/1.332947
In(1984, May) Journal of Applied Physics Vol. 55 (10) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Asano, Tanemasa, Ishiwara, Hiroshi (1982) Epitaxial Growth of Ge Films onto CaF2/Si Structures. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l630
Kanemaru, Seigo, Ishiwara, Hiroshi, Asano, Tanemasa, Furukawa, Seijiro (1986) Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers. Surface Science Letters, 174 (1). doi:10.1016/0167-2584(86)90116-7
Kanemaru, Seigo, Ishiwara, Hiroshi, Asano, Tanemasa, Furukawa, Seijiro (1986) Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers. Surface Science, 174 (1). 666-670 doi:10.1016/0039-6028(86)90489-9
Asano, Tanemasa, Ishiwara, Hiroshi, Furukawa, Seijiro (1989) Heteroepitaxial Growth of GaAs Films on CaF2/Si(511) Structures Prepared with Rapid Thermal Annealing. Japanese Journal of Applied Physics, 28. 1784-1788 doi:10.1143/jjap.28.1784
Ishiwara, Hiroshi, Asano, Tanemasa (1983) Lattice-Matched Epitaxial Growth of Semiconductor Films onto Insulator (Mixed Fluoride)/Si Structures. Japanese Journal of Applied Physics, 22. 201 doi:10.7567/jjaps.22s1.201
Lee, Hee Chul, Asano, Tanemasa, Ishiwara, Hiroshi, Furukawa, Seijiro (1986) Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF2/Si Structures. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l595
Ishiwara, Hiroshi, Asano, Tanemasa (1982) Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si. Applied Physics Letters, 40 (1). 66-68 doi:10.1063/1.92927
Asano, Tanemasa, Ishiwara, Hiroshi, Orihara, Kouzo, Furukawa, Seijiro (1983) Improvement of Crystalline Quality of Si Films on CaF2/Si Structures by Ion Implantation and Solid Phase Recrystallization. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l118
Asano, Tanemasa, Ishiwara, Hiroshi, Furukawa, Seijiro (1988) Flattening the Surface of CaF2/Si(100) Structures by Post-Growth Annealing. Japanese Journal of Applied Physics, 27. 1193-1198 doi:10.1143/jjap.27.1193
Asano, Tanemasa, Ishiwara, Hiroshi (1982) Formation of an Epitaxial Si/Insulator/Si Structure by Vacuum Deposition of CaF2and Si. Japanese Journal of Applied Physics, 21. 187 doi:10.7567/jjaps.21s1.187
Lee, Hee Chul, Asano, Tanemasa, Ishiwara, Hiroshi, Furukawa, Seijiro (1988) Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF2/Si Structures. Japanese Journal of Applied Physics, 27. 1616-1625 doi:10.1143/jjap.27.1616
 
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