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Auvray, P., Baudet, M., Regreny, A. (1987) X‐ray diffraction study of intentionally disordered GaAlAs‐GaAs superlattices. Journal of Applied Physics, 62 (2). 456-460 doi:10.1063/1.339821

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Reference TypeJournal (article/letter/editorial)
TitleX‐ray diffraction study of intentionally disordered GaAlAs‐GaAs superlattices
JournalJournal of Applied Physics
AuthorsAuvray, P.Author
Baudet, M.Author
Regreny, A.Author
Year1987 (July 15)Volume62
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.339821Search in ResearchGate
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Mindat Ref. ID5032012Long-form Identifiermindat:1:5:5032012:5
GUID0
Full ReferenceAuvray, P., Baudet, M., Regreny, A. (1987) X‐ray diffraction study of intentionally disordered GaAlAs‐GaAs superlattices. Journal of Applied Physics, 62 (2). 456-460 doi:10.1063/1.339821
Plain TextAuvray, P., Baudet, M., Regreny, A. (1987) X‐ray diffraction study of intentionally disordered GaAlAs‐GaAs superlattices. Journal of Applied Physics, 62 (2). 456-460 doi:10.1063/1.339821
In(1987, July) Journal of Applied Physics Vol. 62 (2) AIP Publishing

See Also

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Kervarec, J., Baudet, M., Auvray, P., Regreny, A. (1984) The structure of MBE grown (Ga1−xAlxAs)n1(GaAs)n2/ GaAs(001) superlattices as determined by means of X-ray diffraction techniques. Acta Crystallographica Section A Foundations of Crystallography, 40. doi:10.1107/s0108767384093880
Kervarec, J., Baudet, M., Caulet, J., Auvray, P., Emery, J. Y., Regreny, A. (1984) Some aspects of the X-ray structural characterization of (Ga1−xAlxAs)n1(GaAs)n2/GaAs(001) superlattices. Journal of Applied Crystallography, 17 (3) 196-205 doi:10.1107/s0021889884011286
Poudoulec, A., Guenais, B., D’Anterroches, C., Auvray, P., Baudet, M., Regreny, A. (1992) Comparative study of interface structure in GaAs/AlAs superlattices grown by molecular beam epitaxy on (001) GaAs substrates misoriented towards (111)Gaor (111)Asplane. Applied Physics Letters, 60 (19). 2406-2408 doi:10.1063/1.106987
Chomette, A., Deveaud, B., Regreny, A., Bastard, G. (1986) Observation of Carrier Localization in Intentionally Disordered Gaas/Gaalas Superlattices. Physical Review Letters, 57 (12). 1464-1467 doi:10.1103/physrevlett.57.1464
Chomette, A., Deveaud, B., Baudet, M., Auvray, P., Regreny, A. (1986) Band discontinuities and calculations of GaAs‐AlGaAs superlattice structures. Journal of Applied Physics, 59 (11). 3835-3840 doi:10.1063/1.337039
Auvray, P., Baudet, M., Regreny, A. (1989) X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (001) substrates. Journal of Crystal Growth, 95 (1). 288-291 doi:10.1016/0022-0248(89)90403-x
Petroff, J. F., Sauvage-Simkin, M., Bensoussan, S., Capelle, B., Auvray, P., Baudet, M. (1987) Imperfections in (Ga1−xAlxAs)n1–(GaAs)n2/GaAs supperlattices as observed by X-ray diffraction techniques. Journal of Applied Crystallography, 20 (2) 111-116 doi:10.1107/s0021889887087041
Clec'h, G., Calvarin, G., Auvray, P., Baudet, M. (1989) X-ray diffractometry of AlGaAs/GaAs superlattices and GaAs in the temperature range 5–295 K. Journal of Applied Crystallography, 22 (4). 372-375 doi:10.1107/s0021889889004607
Auvray, P., Poudoulec, A., Baudet, M., Guenais, B., Regreny, A., d'Anterroches, C., Massies, J. (1991) Interface roughness of GaAs/AlAs superlattices MBE-grown on vicinal surfaces. Applied Surface Science, 50. 109-114 doi:10.1016/0169-4332(91)90147-c
Kervarec, J., Baudet, M., Caulet, J., Auvrey, P., Emery, J. Y., Regreny, A. (1984) Some aspects of the X-ray structural characterization of (Ga1−x Al x As)n1(GaAs)n2/GaAs(001) superlattices: erratum. Journal of Applied Crystallography, 17 (5) 362 doi:10.1107/s0021889884011675
Deveaud, B., Regreny, A., Emery, J‐Y., Chomette, A. (1986) Photoluminescence study of interface defects in high‐quality GaAs‐GaAlAs superlattices. Journal of Applied Physics, 59 (5). 1633-1640 doi:10.1063/1.336476
 
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