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Pamulapati, J., Lai, R., Ng, G. I., Chen, Y. C., Berger, P. R., Bhattacharya, P. K., Singh, J., Pavlidis, D. (1990) The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes. Journal of Applied Physics, 68 (1). 347-350 doi:10.1063/1.347140

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Reference TypeJournal (article/letter/editorial)
TitleThe relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes
JournalJournal of Applied Physics
AuthorsPamulapati, J.Author
Lai, R.Author
Ng, G. I.Author
Chen, Y. C.Author
Berger, P. R.Author
Bhattacharya, P. K.Author
Singh, J.Author
Pavlidis, D.Author
Year1990 (July)Volume68
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.347140Search in ResearchGate
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Mindat Ref. ID5047034Long-form Identifiermindat:1:5:5047034:1
GUID0
Full ReferencePamulapati, J., Lai, R., Ng, G. I., Chen, Y. C., Berger, P. R., Bhattacharya, P. K., Singh, J., Pavlidis, D. (1990) The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes. Journal of Applied Physics, 68 (1). 347-350 doi:10.1063/1.347140
Plain TextPamulapati, J., Lai, R., Ng, G. I., Chen, Y. C., Berger, P. R., Bhattacharya, P. K., Singh, J., Pavlidis, D. (1990) The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes. Journal of Applied Physics, 68 (1). 347-350 doi:10.1063/1.347140
In(1990, July) Journal of Applied Physics Vol. 68 (1) AIP Publishing

See Also

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Lai, R., Bhattacharya, P. K. (1990) Performance characteristics of In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors realized by two‐step epitaxy: Effects of molecular‐beam epitaxial regrowth. Journal of Applied Physics, 67 (9). 4345-4348 doi:10.1063/1.344952
Zebda, Y., Bhattacharya, P. K., Pavlidis, D., Harrang, J. P. (1990) Performance characteristics of In0.6Ga0.4As/In0.52Al0.48As modulation‐doped field‐effect transistor monolithically integrated with In0.53Ga0.47Asp‐i‐nphotodiodes. Journal of Applied Physics, 68 (4). 1918-1920 doi:10.1063/1.346584
Hong, W.‐P., Ng, G. I., Bhattacharya, P. K., Pavlidis, D., Willing, S., Das, B. (1988) Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures. Journal of Applied Physics, 64 (4). 1945-1949 doi:10.1063/1.341748
Chang, Kevin, Bhattacharya, Pallab, Lai, Richard (1990) Lattice‐mismatched In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors on GaAs: Molecular‐beam epitaxial growth and device performance. Journal of Applied Physics, 67 (7). 3323-3327 doi:10.1063/1.345368
Oh, J. E., Mehdi, I., Pamulapati, J., Bhattacharya, P. K., Haddad, G. I. (1989) The effect of molecular‐beam‐epitaxial growth conditions on the electrical characteristics of In0.52Al0.48As/In0.53Ga0.47As resonant tunneling diodes. Journal of Applied Physics, 65 (2). 842-845 doi:10.1063/1.343075
Gupta, S., Bhattacharya, P. K., Pamulapati, J., Mourou, G. (1990) Subpicosecond photoresponse of carriers in low‐temperature molecular beam epitaxial In0.52Al0.48As/InP. Applied Physics Letters, 57 (15). 1543-1545 doi:10.1063/1.103347
Pamulapati, J., Berger, P., Chang, K., Oh, J., Chen, Yi, Singh, J., Bhattacharya, P., Gibala, R. (1989) Growth phenomena and characteristics of strained InxGa1−xAs on GaAs. Journal of Crystal Growth, 95 (1). 193-196 doi:10.1016/0022-0248(89)90380-1
Alterovitz, S. A., Sieg, R. M., Pamulapati, J., Bhattacharya, P. K. (1993) Ellipsometric characterization of In0.52Al0.48As and of modulation doped field effect transistor structures on InP substrates. Applied Physics Letters, 62 (12). 1411-1413 doi:10.1063/1.108695
Jaffe, Mark, Sekiguchi, Yoshihiko, Singh, Jasprit (1987) Theoretical formalism to understand the role of strain in the tailoring of hole masses inp‐type InxGa1−xAs (on GaAs substrates) and In0.53+xGa0.47−xAs (on InP substrates) modulation‐doped field‐effect transistors. Applied Physics Letters, 51 (23). 1943-1945 doi:10.1063/1.98308
Biswas, Dipankar, Chin, Albert, Pamulapati, Jagadeesh, Bhattacharya, Pallab (1990) Traps in molecular‐beam epitaxial In0.53(GaxAl1−x)0.47As/InP. Journal of Applied Physics, 67 (5). 2450-2453 doi:10.1063/1.345492
Alterovitz, S. A., Sieg, R. M., Pamulapati, J., Bhattacharya, P. K. (1993) Erratum: ‘‘Ellipsometric characterization of In0.52Al0.48As and of modulation doped field effect transistor structures on InP substrates’’ [Appl. Phys. Lett. 62, 1411 (1993)]. Applied Physics Letters, 63 (1). 121 doi:10.1063/1.110820
 
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