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Satoh, M., Yokoyama, K., Kuriyama, K. (1990) The role of Ga antisite defect in the activation process of transmuted impurities in neutron‐transmutation‐doped semi‐insulating GaAs. Journal of Applied Physics, 68 (1). 363-366 doi:10.1063/1.347145

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Reference TypeJournal (article/letter/editorial)
TitleThe role of Ga antisite defect in the activation process of transmuted impurities in neutron‐transmutation‐doped semi‐insulating GaAs
JournalJournal of Applied Physics
AuthorsSatoh, M.Author
Yokoyama, K.Author
Kuriyama, K.Author
Year1990 (July)Volume68
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.347145Search in ResearchGate
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Mindat Ref. ID5047046Long-form Identifiermindat:1:5:5047046:6
GUID0
Full ReferenceSatoh, M., Yokoyama, K., Kuriyama, K. (1990) The role of Ga antisite defect in the activation process of transmuted impurities in neutron‐transmutation‐doped semi‐insulating GaAs. Journal of Applied Physics, 68 (1). 363-366 doi:10.1063/1.347145
Plain TextSatoh, M., Yokoyama, K., Kuriyama, K. (1990) The role of Ga antisite defect in the activation process of transmuted impurities in neutron‐transmutation‐doped semi‐insulating GaAs. Journal of Applied Physics, 68 (1). 363-366 doi:10.1063/1.347145
In(1990, July) Journal of Applied Physics Vol. 68 (1) AIP Publishing

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Satoh, M., Kuriyama, K., Makita, Y. (1989) Photoluminescence study of the annealing behavior of transmuted impurities in neutron‐transmutation‐doped semi‐insulating GaAs. Journal of Applied Physics, 65 (6). 2248-2253 doi:10.1063/1.342837
Kuriyama, K., Yokoyama, K., Tomizawa, K. (1991) Annealing behavior of Ga and Ge antisite defects in neutron‐transmutation‐doped semi‐insulating GaAs. Journal of Applied Physics, 70 (12). 7315-7317 doi:10.1063/1.349749
Kuriyama, K., Yokoyama, K., Satoh, Akemi (1991) Thermally stimulated current in neutron‐transmutation‐doped semi‐insulating GaAs. Applied Physics Letters, 59 (11). 1326-1328 doi:10.1063/1.105489
Satoh, M., Kuriyama, K., Kawakubo, T. (1990) Depth uniformity of electrical properties and doping limitation in neutron‐transmutation‐doped semi‐insulating GaAs. Journal of Applied Physics, 67 (7). 3542-3544 doi:10.1063/1.345303
Kuriyama, K., Yokoyama, K., Tomizawa, K., Takeuchi, T., Takahashi, Hirokazu (1992) Observation of Ga antisite defect in electron‐irradiated semi‐insulating GaAs by photoluminescence. Applied Physics Letters, 61 (7). 843-845 doi:10.1063/1.107763
Kuriyama, K., Satoh, Shigeki, Okada, M. (1996) Phonon shifts relating to the defect structure in neutron-transmutation-doped semi-insulating GaAs. Physical Review B, 54 (19) 13413-13415 doi:10.1103/physrevb.54.13413
Satoh, M., Kuriyama, K. (1990) Channeling study of local distortion in indium‐doped semi‐insulating GaAs. Journal of Applied Physics, 67 (8). 3890-3892 doi:10.1063/1.344993
Satoh, M., Kuriyama, K. (1989) Quenching phenomenon of hopping conduction in neutron-transmutation-doped semi-insulating GaAs. Physical Review B, 40 (5) 3473-3475 doi:10.1103/physrevb.40.3473
Kuriyama, K., Tomizawa, K., Koga, K., Hayashi, N., Watanabe, H., Ikeda, Y., Maekawa, H. (1993) Thermally stimulated current in fast neutron irradiated semi‐insulating GaAs: Ga antisite related new trap. Applied Physics Letters, 63 (14). 1966-1968 doi:10.1063/1.110616
Satoh, M., Kawahara, H., Kuriyama, K., Kawakubo, T., Yoneda, K., Kimura, I. (1988) Influence of photoexcitation on hopping conduction in neutron‐transmutation‐doped GaAs. Journal of Applied Physics, 63 (4). 1099-1103 doi:10.1063/1.340014
Kuriyama, K., Satoh, M., Kim, C. (1986) Ion channeling effect of In dopant in semi‐insulating GaAs. Applied Physics Letters, 48 (6). 411-412 doi:10.1063/1.96514
 
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