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Kanata, T., Matsunaga, M., Takakura, H., Hamakawa, Y., Nishino, T. (1990) Photoreflectance characterization of surface Fermi level in as‐grown GaAs(100). Journal of Applied Physics, 68 (10). 5309-5313 doi:10.1063/1.347023

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Reference TypeJournal (article/letter/editorial)
TitlePhotoreflectance characterization of surface Fermi level in as‐grown GaAs(100)
JournalJournal of Applied Physics
AuthorsKanata, T.Author
Matsunaga, M.Author
Takakura, H.Author
Hamakawa, Y.Author
Nishino, T.Author
Year1990 (November 15)Volume68
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.347023Search in ResearchGate
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Mindat Ref. ID5047087Long-form Identifiermindat:1:5:5047087:3
GUID0
Full ReferenceKanata, T., Matsunaga, M., Takakura, H., Hamakawa, Y., Nishino, T. (1990) Photoreflectance characterization of surface Fermi level in as‐grown GaAs(100). Journal of Applied Physics, 68 (10). 5309-5313 doi:10.1063/1.347023
Plain TextKanata, T., Matsunaga, M., Takakura, H., Hamakawa, Y., Nishino, T. (1990) Photoreflectance characterization of surface Fermi level in as‐grown GaAs(100). Journal of Applied Physics, 68 (10). 5309-5313 doi:10.1063/1.347023
In(1990, November) Journal of Applied Physics Vol. 68 (10) AIP Publishing

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Kanata, T., Matsunaga, M., Takakura, H., Hamakawa, Y., Nishino, T. (1991) Deep‐level characterization ofn‐type GaAs by photoreflectance spectroscopy. Journal of Applied Physics, 69 (6). 3691-3695 doi:10.1063/1.348486
Kanata, T., Takakura, H., Matsunaga, M., Hamakawa, Y. (1990) Heteroepitaxial growth of InxGa1−xAs on graphoepitaxially grown germanium. Applied Physics Letters, 56 (18). 1752-1754 doi:10.1063/1.103089
Kanata, T., Suzawa, H., Matsunaga, M., Takakura, H., Hamakawa, Y., Kato, H., Nishino, T. (1990) Photoreflectance study on residual strain in heteroepitaxial gallium arsenide on silicon. Physical Review B, 41 (5) 2936-2943 doi:10.1103/physrevb.41.2936
Kanata, T., Takakura, H., Miyagi, K., Hamakawa, Y., Kariya, T. (1989) Graphoepitaxial growth of germanium by laser recrystallization. Journal of Applied Physics, 66 (10). 4770-4774 doi:10.1063/1.343788
Kanata, T., Takakura, H., Mizuhara, H., Hamakawa, Y., Kariya, T. (1988) Graphoepitaxial growth of ZnS on a textured natural crystalline surface relief foreign substrate. Journal of Applied Physics, 64 (7). 3492-3496 doi:10.1063/1.341485
Kanata, T., Takakura, H., Hamakawa, Y. (1989) Solid phase recrystallization in molecular beam deposited gallium arsenide. Applied Physics Letters, 54 (8). 706-708 doi:10.1063/1.100869
Kanata, T., Takakura, H., Hamakawa, Y., Kubota, K. (1989) Graphoepitaxial growth of germanium on the textured natural crystalline surface relief duplicated on a foreign substrate. Journal of Applied Physics, 65 (12). 4730-4734 doi:10.1063/1.343224
Yamazoe, Y., Takakura, H., Nishino, T., Hamakawa, Y., Kariya, T. (1978) Characterization of the optical properties of LPE InxGa1−xAsyP1−y thin layers grown on InP. Journal of Crystal Growth, 45. 454-458 doi:10.1016/0022-0248(78)90475-x
Nishino, T., Inoue, Y., Hamakawa, Y., Kondow, M., Minagawa, S. (1988) Electroreflectance study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (7). 583-585 doi:10.1063/1.99864
Nishino, T., Yamazoe, Y., Hamakawa, Y. (1978) Electroreflectance of In0.79Ga0.21As0.54P0.46. Applied Physics Letters, 33 (10). 861-862 doi:10.1063/1.90215
Hwang, J. S., Tyan, S. L., Chou, W. Y., Lee, M. L., Weyburne, David, Hang, Z., Lin, H. H., Lee, T. L. (1994) Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures. Applied Physics Letters, 64 (24). 3314-3316 doi:10.1063/1.111294
 
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