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Jain, R. K., van Overstraeten, R. J. (1974) Calculation of the diffusion induced stresses in silicon. physica status solidi (a), 25 (1). 125-130 doi:10.1002/pssa.2210250109

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Reference TypeJournal (article/letter/editorial)
TitleCalculation of the diffusion induced stresses in silicon
Journalphysica status solidi (a)
AuthorsJain, R. K.Author
van Overstraeten, R. J.Author
Year1974 (September 16)Volume25
Issue1
PublisherWiley
DOIdoi:10.1002/pssa.2210250109Search in ResearchGate
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Mindat Ref. ID5048924Long-form Identifiermindat:1:5:5048924:2
GUID0
Full ReferenceJain, R. K., van Overstraeten, R. J. (1974) Calculation of the diffusion induced stresses in silicon. physica status solidi (a), 25 (1). 125-130 doi:10.1002/pssa.2210250109
Plain TextJain, R. K., van Overstraeten, R. J. (1974) Calculation of the diffusion induced stresses in silicon. physica status solidi (a), 25 (1). 125-130 doi:10.1002/pssa.2210250109
In(1974, September) physica status solidi (a) Vol. 25 (1) Wiley

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Nuyts, W., van Overstraeten, R. (1973) Computer calculations of impurity profiles in silicon (I). physica status solidi (a), 15 (1). 329-341 doi:10.1002/pssa.2210150137
Nuyts, W., van Overstraeten, R. (1973) Computer calculations of impurity profiles in silicon (II). physica status solidi (a), 15 (2). 455-472 doi:10.1002/pssa.2210150210
Putman, R., Van Overstraeten, R. (1972) Influence of band-bending on the tunnelling probability in MIS structures. physica status solidi (a), 9 (1). 247-252 doi:10.1002/pssa.2210090128
Kästner, S., Hesse, J. (1974) The influence of dislocations on the diffusion of gold in silicon. physica status solidi (a), 25 (1). 261-267 doi:10.1002/pssa.2210250124
JAIN, R. K., VAN OVERSTRAETEN, R. J. (1975) ChemInform Abstract: ACCURATE THEORETICAL ARSENIC DIFFUSION PROFILES IN SILICON FROM PROCESSING DATA. Chemischer Informationsdienst, 6 (27) doi:10.1002/chin.197527016
Borukhovich, P. Z., Kiv, A. E., Kimarskii, V. I., Koifman, A. I., Niyazova, O. R. (1974) Light-enhanced gold diffusion in silicon. physica status solidi (a), 25 (2). doi:10.1002/pssa.2210250255
Jain, R. K. (1977) Calculation of the Fermi level, minority carrier concentration, effective intrinsic concentration, and einstein relation in n- and p-type germanium and silicon. physica status solidi (a), 42 (1). 221-226 doi:10.1002/pssa.2210420123
Stojadinović, N. D., Ristić, S. D. (1979) Effects of emitter diffusion-induced stresses on the common-emitter current gain of silicon planar transistors. physica status solidi (a), 51 (1). doi:10.1002/pssa.2210510155
Schaeffer, H. A. (1974) The application of silicon-30 in self-diffusion investigations. physica status solidi (a), 22 (1). 281-291 doi:10.1002/pssa.2210220132
Schmalz, K., Gaworzewski, P., Winkler, R., Skorupa, W. (1991) On carbon–implantation induced donors in silicon. physica status solidi (a), 127 (1). doi:10.1002/pssa.2211270141
Kassing, R., Lenz, H. (1974) Properties of the gold acceptor state in silicon. physica status solidi (a), 26 (1). 155-165 doi:10.1002/pssa.2210260114
 
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