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Rosin, H. (1974) On chemical etching of structural defects in epitaxial GaAs1-xPx and bulk GaAs. physica status solidi (a), 25 (1). doi:10.1002/pssa.2210250137

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Reference TypeJournal (article/letter/editorial)
TitleOn chemical etching of structural defects in epitaxial GaAs1-xPx and bulk GaAs
Journalphysica status solidi (a)
AuthorsRosin, H.Author
Year1974 (September 16)Volume25
Issue1
PublisherWiley
DOIdoi:10.1002/pssa.2210250137Search in ResearchGate
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Mindat Ref. ID5048980Long-form Identifiermindat:1:5:5048980:8
GUID0
Full ReferenceRosin, H. (1974) On chemical etching of structural defects in epitaxial GaAs1-xPx and bulk GaAs. physica status solidi (a), 25 (1). doi:10.1002/pssa.2210250137
Plain TextRosin, H. (1974) On chemical etching of structural defects in epitaxial GaAs1-xPx and bulk GaAs. physica status solidi (a), 25 (1). doi:10.1002/pssa.2210250137
In(1974, September) physica status solidi (a) Vol. 25 (1) Wiley

See Also

These are possibly similar items as determined by title/reference text matching only.

Rosin, H., Freydank, G. (1975) On structural etching of GaP and (Ga, In)P. physica status solidi (a), 32 (1). 133-138 doi:10.1002/pssa.2210320114
Naganuma, M., Takahashi, K. (1975) GaAs, GaP, and GaAs1−xPx films deposited by molecular beam epitaxy. physica status solidi (a), 31 (1). 187-200 doi:10.1002/pssa.2210310121
Stegmann, R., Kloth, B., Oelgart, G. (1982) The Influence of the Doping Level on the Cathodoluminescence in GaAs1−xPx: N, Zn Epitaxial Layers. physica status solidi (a), 73 (1). 129-137 doi:10.1002/pssa.2210730116
Heine, G., Morgenstern, M. (1973) On the infrared luminescence of GaAs1-xPx. physica status solidi (a), 18 (2). doi:10.1002/pssa.2210180258
Heine, G., Klose, H., Mika, J., Thamm, E. (1973) On the determination of the carrier concentration of GaAs1−xPx. physica status solidi (a), 17 (1). 251-256 doi:10.1002/pssa.2210170129
Bąk-Misiuk, J., Brühl, H. G., Paszkowicz, W., Pietsch, U. (1988) Temperature dependence of the lattice constant in doped and nonstoichiometric GaAs, GaAs1−xPx, and GaP. physica status solidi (a), 106 (2). 451-457 doi:10.1002/pssa.2211060215
Rosin, H. (1975) On the method and results of a dislocation structure analysis of Ga(As, P) by etching. physica status solidi (a), 29 (1). doi:10.1002/pssa.2210290142
Popov, A. S., Yanchev, I. Y. (1977) On the disorder scattering in GaAs1-xPx solid solutions. physica status solidi (a), 41 (2). 687-691 doi:10.1002/pssa.2210410244
Gladkov, P. S., Ozanyan, K. B. (1988) Photoconductivity in bulk and epitaxial GaAs: V. physica status solidi (a), 108 (2). doi:10.1002/pssa.2211080250
Stelgmann, R., Rasbegaev, W. N., Pikhtin, A. N. (1987) Radiative recombination in ZnN-doped GaAs1−xPx: N mixed crystals. physica status solidi (a), 99 (1). 289-294 doi:10.1002/pssa.2210990134
Dubonos, S. V., Koveshnikov, S. V. (1990) Formation of Highly Mobile Defects in GaAs Under Ar-Plasma Etching. physica status solidi (a), 120 (1). 77-81 doi:10.1002/pssa.2211200105
 
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