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Joosten, H. P., Noteborn, H. J. M. F., Kaski, K., Lenstra, D. (1991) The stability of the self‐consistently determined current of a double‐barrier resonant‐tunneling diode. Journal of Applied Physics, 70 (6). 3141-3147 doi:10.1063/1.349294

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Reference TypeJournal (article/letter/editorial)
TitleThe stability of the self‐consistently determined current of a double‐barrier resonant‐tunneling diode
JournalJournal of Applied Physics
AuthorsJoosten, H. P.Author
Noteborn, H. J. M. F.Author
Kaski, K.Author
Lenstra, D.Author
Year1991 (September 15)Volume70
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.349294Search in ResearchGate
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Mindat Ref. ID5055557Long-form Identifiermindat:1:5:5055557:2
GUID0
Full ReferenceJoosten, H. P., Noteborn, H. J. M. F., Kaski, K., Lenstra, D. (1991) The stability of the self‐consistently determined current of a double‐barrier resonant‐tunneling diode. Journal of Applied Physics, 70 (6). 3141-3147 doi:10.1063/1.349294
Plain TextJoosten, H. P., Noteborn, H. J. M. F., Kaski, K., Lenstra, D. (1991) The stability of the self‐consistently determined current of a double‐barrier resonant‐tunneling diode. Journal of Applied Physics, 70 (6). 3141-3147 doi:10.1063/1.349294
In(1991, September) Journal of Applied Physics Vol. 70 (6) AIP Publishing

See Also

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Joosten, H. P., Noteborn, H. J. M. F., Kaski, K. (1993) Switch simulations of a double‐barrier resonant‐tunnel diode based circuit. Journal of Applied Physics, 74 (1). 712-717 doi:10.1063/1.355236
van de Roer, T.G., Kwaspen, J.J.M., Joosten, H., Noteborn, H., Lenstra, D., Henini, M. (1991) Influence of scattering on the I-V characteristics of double-barrier resonant-tunneling diodes. Physica B: Condensed Matter, 175 (1). 301-306 doi:10.1016/0921-4526(91)90731-s
Noteborn, H J M F, Tartwijk, G H M van, Joosten, H P, Lenstra, D (1991) Journal of Physics: Condensed Matter, 3 (23). IOP Publishing. 4249-4256 doi:10.1088/0953-8984/3/23/013
Joosten, H.P., Noteborn, H.J.M.F., Kaski, K., Lenstra, D. (1991) Effect of a parallel capacitor on the stability of the DC-configurations of a DBRT-structure. Physica B: Condensed Matter, 175 (1). 297-300 doi:10.1016/0921-4526(91)90730-3
Mains, R. K., Haddad, G. I. (1991) Switching speeds in double‐barrier resonant‐tunneling diode structures. Journal of Applied Physics, 70 (12). 7638-7639 doi:10.1063/1.349726
Li, H. S., Chen, L. P., Chen, Y. W., Wang, K. L., Pan, D. S., Liu, J. M. (1994) Dominant photogenerated valley current in a double‐barrier resonant‐tunneling diode. Applied Physics Letters, 65 (23). 2999-3001 doi:10.1063/1.112489
Noteborn, H J M F, Tartwijk, G H M van, Lenstra, D (1992) Magneto-tunnelling in double-barrier structures: the B perpendicular to J configuration. Journal of Physics: Condensed Matter, 4 (16). 4125-4134 doi:10.1088/0953-8984/4/16/013
Jo, J., Li, H. S., Chen, Y. W., Wang, K. L. (1994) Observation of a large capacitive current in a double barrier resonant tunneling diode at resonance. Applied Physics Letters, 64 (17). 2276-2278 doi:10.1063/1.111642
Liu, H. C. (1988) Circuit simulation of resonant tunneling double‐barrier diode. Journal of Applied Physics, 64 (9). 4792-4794 doi:10.1063/1.341204
Young, Jeff F., Wood, B. M., Liu, H. C., Buchanan, M., Landheer, D., SpringThorpe, A. J., Mandeville, P. (1988) Effect of circuit oscillations on the dc current‐voltage characteristics of double barrier resonant tunneling structures. Applied Physics Letters, 52 (17). 1398-1400 doi:10.1063/1.99127
Chen, J., Chen, J. G., Yang, C. H., Wilson, R. A. (1991) The I‐V characteristics of double‐barrier resonant tunneling diodes: Observation and calculation on their temperature dependence and asymmetry. Journal of Applied Physics, 70 (6). 3131-3136 doi:10.1063/1.349292
 
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