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Pananakakis, G., Ghibaudo, G., Kies, R., Papadas, C. (1995) Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures. Journal of Applied Physics, 78 (4). 2635-2641 doi:10.1063/1.360124

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Reference TypeJournal (article/letter/editorial)
TitleTemperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures
JournalJournal of Applied Physics
AuthorsPananakakis, G.Author
Ghibaudo, G.Author
Kies, R.Author
Papadas, C.Author
Year1995 (August 15)Volume78
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.360124Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5076278Long-form Identifiermindat:1:5:5076278:3
GUID0
Full ReferencePananakakis, G., Ghibaudo, G., Kies, R., Papadas, C. (1995) Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures. Journal of Applied Physics, 78 (4). 2635-2641 doi:10.1063/1.360124
Plain TextPananakakis, G., Ghibaudo, G., Kies, R., Papadas, C. (1995) Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures. Journal of Applied Physics, 78 (4). 2635-2641 doi:10.1063/1.360124
In(1995, August) Journal of Applied Physics Vol. 78 (4) AIP Publishing

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Pananakakis, G., Ghibaudo, G., Papadas, C., Vincent, E., Kies, R. (1997) Generalized trapping kinetic model for the oxide degradation after Fowler–Nordheim uniform gate stress. Journal of Applied Physics, 82 (5). 2548-2557 doi:10.1063/1.366539
Pananakakis, G., Ghibaudo, G., Papadas, C., Vincent, E., Kies, R. (1998) Erratum: “Generalized trapping kinetic model for the oxide degradation after Fowler–Nordheim uniform gate stress” [J. Appl. Phys. 82, 2548 (1997)]. Journal of Applied Physics, 83 (5). 2869 doi:10.1063/1.366590
Clerc, R., Spinelli, A., Ghibaudo, G., Pananakakis, G. (2002) Theory of direct tunneling current in metal–oxide–semiconductor structures. Journal of Applied Physics, 91 (3). 1400-1409 doi:10.1063/1.1427398
Kies, R., Egilsson, T., Ghibaudo, G., Pananakakis, G. (1996) A method for the assessment of oxide charge density and centroid in metal‐oxide‐semiconductor structures after uniform gate stress. Applied Physics Letters, 68 (26). 3790-3792 doi:10.1063/1.116618
Riess, P., Ghibaudo, G., Pananakakis, G., Brini, J., Ghidini, G. (1999) Electric field and temperature dependence of the stress induced leakage current: Fowler–Nordheim or Schottky emission?. Journal of Non-Crystalline Solids, 245 (1) 48-53 doi:10.1016/s0022-3093(98)00853-9
Papadas, C., Ghibaudo, G., Pananakakis, G., Riva, C., Mortini, P. (1992) Oxide reliability criterion for the evaluation of the endurance performance of electrically erasable programmable read only memories. Journal of Applied Physics, 71 (9). 4589-4593 doi:10.1063/1.350758
Miranda, E., Redin, G., Faigón, A. (1997) An effective-field approach for the Fowler–Nordheim tunneling current through a metal–oxide–semiconductor charged barrier. Journal of Applied Physics, 82 (3). 1262-1265 doi:10.1063/1.366535
Mao, Lingfeng, Tan, Changhua, Xu, Mingzhen (2000) Thickness measurements for ultrathin-film insulator metal–oxide–semiconductor structures using Fowler–Nordheim tunneling current oscillations. Journal of Applied Physics, 88 (11). 6560-6563 doi:10.1063/1.1321781
Ghibaudo, Gerard, Saks, Nelson S. (1989) Investigation of the charge pumping current in metal‐oxide‐semiconductor structures. Journal of Applied Physics, 65 (11). 4311-4318 doi:10.1063/1.343290
Inoue, Masao, Shirafuji, Junji (1995) Interface State Generation in p-Type Si Metal/ Oxide/ Semiconductor Capacitors due to Fowler-Nordheim Tunneling Current Stress. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l1315
Riess, P., Ghibaudo, G., Pananakakis, G. (1999) Analysis of the stress-induced leakage current and related trap distribution. Applied Physics Letters, 75 (24). 3871-3873 doi:10.1063/1.125484
 
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