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Logothetidis, S., Petalas, J., Ves, S. (1996) The optical properties of a-C:H films between 1.5 and 10 eV and the effect of thermal annealing on the film character. Journal of Applied Physics, 79 (2). 1040pp. doi:10.1063/1.360892

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Reference TypeJournal (article/letter/editorial)
TitleThe optical properties of a-C:H films between 1.5 and 10 eV and the effect of thermal annealing on the film character
JournalJournal of Applied Physics
AuthorsLogothetidis, S.Author
Petalas, J.Author
Ves, S.Author
Year1996Volume79
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.360892Search in ResearchGate
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Mindat Ref. ID5078275Long-form Identifiermindat:1:5:5078275:0
GUID0
Full ReferenceLogothetidis, S., Petalas, J., Ves, S. (1996) The optical properties of a-C:H films between 1.5 and 10 eV and the effect of thermal annealing on the film character. Journal of Applied Physics, 79 (2). 1040pp. doi:10.1063/1.360892
Plain TextLogothetidis, S., Petalas, J., Ves, S. (1996) The optical properties of a-C:H films between 1.5 and 10 eV and the effect of thermal annealing on the film character. Journal of Applied Physics, 79 (2). 1040pp. doi:10.1063/1.360892
In(1996) Journal of Applied Physics Vol. 79 (2) AIP Publishing

See Also

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Logothetidis, S., Petalas, J. (1996) Dielectric function and reflectivity of 3C–silicon carbide and the component perpendicular to thecaxis of 6H–silicon carbide in the energy region 1.5–9.5 eV. Journal of Applied Physics, 80 (3). 1768-1772 doi:10.1063/1.362975
Boultadakis, S., Logothetidis, S., Ves, S., Kircher, J. (1993) Optical properties of μc‐Si:H/α‐Si:H layered structures: Influence of the hydrogen bonds, crystallite size, and thickness. Journal of Applied Physics, 73 (2). 914-925 doi:10.1063/1.353304
Petalas, J., Logothetidis, S. (1994) Tetrahedron-model analysis of silicon nitride thin films and the effect of hydrogen and temperature on their optical properties. Physical Review B, 50 (16) 11801-11816 doi:10.1103/physrevb.50.11801
Petalas, J., Logothetidis, S., Boultadakis, S., Markwitz, A. (1995) The effect of hydrogen and temperature on the optical gaps of silicon nitride and comparative stoichiometry studies on SiN thin films. Journal of Non-Crystalline Solids, 187. 291-296 doi:10.1016/0022-3093(95)00152-2
Logothetidis, S., Petalas, J., Markwitz, A., Johnson, R. L. (1993) Optical and compositional studies of SiN thin films with conventional and synchrotron radiation ellipsometry. Journal of Applied Physics, 73 (12). 8514-8518 doi:10.1063/1.353379
Boultadakis, S., Logothetidis, S., Ves, S. (1992) Comparative study of thin poly‐Si films grown by ion implantation and annealing with spectroscopic ellipsometry, Raman spectroscopy, and electron microscopy. Journal of Applied Physics, 72 (8). 3648-3658 doi:10.1063/1.352308
Petalas, J., Logothetidis, S., Gioti, M., Janowitz, C. (1998) Optical Properties and Temperature Dependence of the Interband Transitions of 3C- and 6H-SiC in the Energy Region 5 to 10 eV. physica status solidi (b), 209 (2). 499-521 doi:10.1002/(sici)1521-3951(199810)209:2<499::aid-pssb499>3.0.co;2-m
Lee, Jung H., Lee, Young H., Farouk, Bakhtier (1996) Influence of ion energy flux on structure and optical properties ofa‐C:H thin films. Journal of Applied Physics, 79 (10). 7676-7681 doi:10.1063/1.362432
Logothetidis, S., Evangelou, E., Konofaos, N. (1997) Properties and density of states of the interface between silicon and carbon films rich in sp3 bonds. Journal of Applied Physics, 82 (10). 5017-5020 doi:10.1063/1.366402
Patsalas, P., Logothetidis, S. (2000) The effect of postgrowth ion irradiation on the microstructure and the interface properties of amorphous carbon films on silicon. Journal of Applied Physics, 88 (11). 6346-6354 doi:10.1063/1.1323751
Paloura, E. C., Logothetidis, S., Boultadakis, S., Ves, S. (1991) Comparative study of the properties of ultrathin Si3N4films with Auger electron spectroscopy, spectroscopic ellipsometry, and Raman spectroscopy. Applied Physics Letters, 59 (3). 280-282 doi:10.1063/1.105621
 
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