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Zakhleniuk, N. A., Bennett, C. R., Stavrou, V. N., Babiker, M., Ridley, B. K. (1999) Quantum Capture of Injected Electrons in GaN-Based Laser Heterostructures. physica status solidi (a), 176 (1). 79-83 doi:10.1002/(sici)1521-396x(199911)176:1<79::aid-pssa79>3.0.co;2-7

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Reference TypeJournal (article/letter/editorial)
TitleQuantum Capture of Injected Electrons in GaN-Based Laser Heterostructures
Journalphysica status solidi (a)
AuthorsZakhleniuk, N. A.Author
Bennett, C. R.Author
Stavrou, V. N.Author
Babiker, M.Author
Ridley, B. K.Author
Year1999 (November)Volume176
Issue1
PublisherWiley
DOIdoi:10.1002/(sici)1521-396x(199911)176:1<79::aid-pssa79>3.0.co;2-7Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5085003Long-form Identifiermindat:1:5:5085003:3
GUID0
Full ReferenceZakhleniuk, N. A., Bennett, C. R., Stavrou, V. N., Babiker, M., Ridley, B. K. (1999) Quantum Capture of Injected Electrons in GaN-Based Laser Heterostructures. physica status solidi (a), 176 (1). 79-83 doi:10.1002/(sici)1521-396x(199911)176:1<79::aid-pssa79>3.0.co;2-7
Plain TextZakhleniuk, N. A., Bennett, C. R., Stavrou, V. N., Babiker, M., Ridley, B. K. (1999) Quantum Capture of Injected Electrons in GaN-Based Laser Heterostructures. physica status solidi (a), 176 (1). 79-83 doi:10.1002/(sici)1521-396x(199911)176:13.0.co;2-7
In(1999, November) physica status solidi (a) Vol. 176 (1) Wiley

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Ridley, B. K. (1999) The Low-Field Electron Mobility in Bulk AlGaN. physica status solidi (a), 176 (1). 359-362 doi:10.1002/(sici)1521-396x(199911)176:1<359::aid-pssa359>3.0.co;2-2
Ridley, B. K., Zakhleniuk, N. A., Bennett, C. R., Constantinou, N. C., Babiker, M. (1997) Nonequilibrium Electrons under Quantization Conditions. physica status solidi (b), 204 (1). 262-264 doi:10.1002/1521-3951(199711)204:1<262::aid-pssb262>3.0.co;2-2
Nakamura, S. (1999) Present Status of InGaN-Based Laser Diodes. physica status solidi (a), 176 (1). 15-22 doi:10.1002/(sici)1521-396x(199911)176:1<15::aid-pssa15>3.0.co;2-6
Pluciński, K. J., Małachowski, M. J. (1999) Quantum Yield of GaN and (Ga, Al)N Band-Gap Graded Ultraviolet p–n Detectors. physica status solidi (a), 176 (1). 153-156 doi:10.1002/(sici)1521-396x(199911)176:1<153::aid-pssa153>3.0.co;2-y
Yunovich, A. E., Kudryashov, V. E., Mamakin, S. S., Turkin, A. N., Kovalev, A. N., Manyakhin, F. I. (1999) Spectra and Quantum Efficiency of Light-Emitting Diodes Based on GaN Heterostructures with Quantum Wells. physica status solidi (a), 176 (1). 125-130 doi:10.1002/(sici)1521-396x(199911)176:1<125::aid-pssa125>3.0.co;2-1
Lahrèche, H., Vaille, M., Beaumont, B., Laügt, M., Vennéguès, P., Gibart, P. (1999) Metal Organic Vapour Phase Epitaxy (MOVPE) Growth of GaN(n)/SiC(p) Heterostructures. physica status solidi (a), 176 (1). 109-112 doi:10.1002/(sici)1521-396x(199911)176:1<109::aid-pssa109>3.0.co;2-u
(1999) physica status solidi (a), 176 (1). Wiley. doi:10.1002/(sici)1521-396x(199911)176:1<>1.0.co;2-m
Duboz, J.-Y. (1999) GaN as Seen by the Industry. physica status solidi (a), 176 (1). 5-14 doi:10.1002/(sici)1521-396x(199911)176:1<5::aid-pssa5>3.0.co;2-d
Karpov, S. Yu, Talalaev, R. A., Makarov, Yu. N., Grandjean, N., Massies, J., Damilano, B. (1999) Growth Kinetics of GaN in Ammonia Atmosphere. physica status solidi (a), 176 (1). 333-336 doi:10.1002/(sici)1521-396x(199911)176:1<333::aid-pssa333>3.0.co;2-y
Shirakashi, J., Shimizu, M., OkumuraShirakashi, H. (1999) GaN-Based Quantum-Effect Electron Devices Using Quantum Interference of Hot Electron Waves. physica status solidi (a), 176 (1). 189-193 doi:10.1002/(sici)1521-396x(199911)176:1<189::aid-pssa189>3.0.co;2-z
Miskys, C. R., Kelly, M. K., Ambacher, O., Stutzmann, M. (1999) MOCVD-Epitaxy on Free-Standing HVPE-GaN Substrates. physica status solidi (a), 176 (1). 443-446 doi:10.1002/(sici)1521-396x(199911)176:1<443::aid-pssa443>3.0.co;2-q
 
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