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Kawakami, Y., Omae, K., Kaneta, A., Okamoto, K., Izumi, T., Sajou, S., Inoue, K., Narukawa, Y., Mukai, T., Fujita, Sg. (2001) Radiative and Nonradiative Recombination Processes in GaN-Based Semiconductors. physica status solidi (a), 183 (1). 41-50 doi:10.1002/1521-396x(200101)183:1<41::aid-pssa41>3.0.co;2-v

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Reference TypeJournal (article/letter/editorial)
TitleRadiative and Nonradiative Recombination Processes in GaN-Based Semiconductors
Journalphysica status solidi (a)
AuthorsKawakami, Y.Author
Omae, K.Author
Kaneta, A.Author
Okamoto, K.Author
Izumi, T.Author
Sajou, S.Author
Inoue, K.Author
Narukawa, Y.Author
Mukai, T.Author
Fujita, Sg.Author
Year2001 (January)Volume183
Issue1
PublisherWiley
DOIdoi:10.1002/1521-396x(200101)183:1<41::aid-pssa41>3.0.co;2-vSearch in ResearchGate
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Mindat Ref. ID5086145Long-form Identifiermindat:1:5:5086145:5
GUID0
Full ReferenceKawakami, Y., Omae, K., Kaneta, A., Okamoto, K., Izumi, T., Sajou, S., Inoue, K., Narukawa, Y., Mukai, T., Fujita, Sg. (2001) Radiative and Nonradiative Recombination Processes in GaN-Based Semiconductors. physica status solidi (a), 183 (1). 41-50 doi:10.1002/1521-396x(200101)183:1<41::aid-pssa41>3.0.co;2-v
Plain TextKawakami, Y., Omae, K., Kaneta, A., Okamoto, K., Izumi, T., Sajou, S., Inoue, K., Narukawa, Y., Mukai, T., Fujita, Sg. (2001) Radiative and Nonradiative Recombination Processes in GaN-Based Semiconductors. physica status solidi (a), 183 (1). 41-50 doi:10.1002/1521-396x(200101)183:13.0.co;2-v
In(2001, January) physica status solidi (a) Vol. 183 (1) Wiley

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Omae, K., Kawakami, Y., Narukawa, Y., Watanabe, Y., Mukai, T., Fujita, Sg. (2002) Nondegenerated Pump and Probe Spectroscopy in InGaN-Based Semiconductors. physica status solidi (a), 190 (1). 93-98 doi:10.1002/1521-396x(200203)190:1<93::aid-pssa93>3.0.co;2-6
Kawakami, Y., Kaneta, A., Omae, K., Shikanai, A., Okamoto, K., Marutsuki, G., Narukawa, Y., Mukai, T., Fujita, Sg. (2003) Recombination dynamics in low-dimensional nitride semiconductors. physica status solidi (b), 240 (2). 337-343 doi:10.1002/pssb.200303427
Kawakami, Y., Narukawa, Y., Omae, K., Fujita, Sg., Nakamura, S. (2000) Dimensionality of Excitons in InGaN-Based Light Emitting Devices. physica status solidi (a), 178 (1). 331-336 doi:10.1002/1521-396x(200003)178:1<331::aid-pssa331>3.0.co;2-9
Marutsuki, G., Narukawa, Y., Mitani, T., Mukai, T., Shinomiya, G., Kaneta, A., Kawakami, Y., Fujita, Sg. (2002) Electroluminescence Mapping of InGaN-based LEDs by SNOM. physica status solidi (a), 192 (1). 110-116 doi:10.1002/1521-396x(200207)192:1<110::aid-pssa110>3.0.co;2-n
Okamoto, K., Kaneta, A., Inoue, K., Kawakami, Y., Terazima, M., Shinomiya, G., Mukai, T., Fujita, Sg. (2001) Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method with Subpicosecond Pulsed Laser. physica status solidi (b), 228 (1). 81-84 doi:10.1002/1521-3951(200111)228:1<81::aid-pssb81>3.0.co;2-f
Kaneta, A., Marutsuki, G., Okamoto, K., Kawakami, Y., Nakagawa, Y., Shinomiya, G., Mukai, T., Fujita, Sg. (2001) Spatial Inhomogeneity of Photoluminescence in InGaN Single Quantum Well Structures. physica status solidi (b), 228 (1). 153-156 doi:10.1002/1521-3951(200111)228:1<153::aid-pssb153>3.0.co;2-z
Shikanai, A., Kojima, K., Omae, K., Kawakami, Y., Narukawa, Y., Mukai, T., Fujita, Sg. (2003) The hot carrier dynamics in InGaN multi-quantum well structure. physica status solidi (b), 240 (2). 392-395 doi:10.1002/pssb.200303256
Narukawa, Y., Kawakami, Y., Fujita, Sg., Nakamura, S. (1999) Recombination Dynamics in InxGa1—xN Multiple-Quantum-Well Based Laser Diodes under High Photoexcitation. physica status solidi (a), 176 (1). 39-43 doi:10.1002/(sici)1521-396x(199911)176:1<39::aid-pssa39>3.0.co;2-f
Kojima, K., Shikanai, A., Omae, K., Funato, M., Kawakami, Y., Narukawa, Y., Mukai, T., Fujita, Sg. (2004) Optically pumped lasing and gain formation properties in blue Inx Ga1–x N MQWs. physica status solidi (b), 241 (12). 2676-2680 doi:10.1002/pssb.200405096
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Di Carlo, A. (2001) Tuning Optical Properties of GaN-Based Nanostructures by Charge Screening. physica status solidi (a), 183 (1). 81-85 doi:10.1002/1521-396x(200101)183:1<81::aid-pssa81>3.0.co;2-n
 
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