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Kimura, R., Shike, J., Shigemori, A., Ishida, K., Takahashi, K. (2001) A New Approach to the Growth of Cubic GaN Films Using an AlN/GaN Ordered Alloy as a Buffer Layer. physica status solidi (a), 188 (2). 687-689 doi:10.1002/1521-396x(200112)188:2<687::aid-pssa687>3.0.co;2-k

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Reference TypeJournal (article/letter/editorial)
TitleA New Approach to the Growth of Cubic GaN Films Using an AlN/GaN Ordered Alloy as a Buffer Layer
Journalphysica status solidi (a)
AuthorsKimura, R.Author
Shike, J.Author
Shigemori, A.Author
Ishida, K.Author
Takahashi, K.Author
Year2001 (December)Volume188
Issue2
PublisherWiley
DOIdoi:10.1002/1521-396x(200112)188:2<687::aid-pssa687>3.0.co;2-kSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID5087018Long-form Identifiermindat:1:5:5087018:9
GUID0
Full ReferenceKimura, R., Shike, J., Shigemori, A., Ishida, K., Takahashi, K. (2001) A New Approach to the Growth of Cubic GaN Films Using an AlN/GaN Ordered Alloy as a Buffer Layer. physica status solidi (a), 188 (2). 687-689 doi:10.1002/1521-396x(200112)188:2<687::aid-pssa687>3.0.co;2-k
Plain TextKimura, R., Shike, J., Shigemori, A., Ishida, K., Takahashi, K. (2001) A New Approach to the Growth of Cubic GaN Films Using an AlN/GaN Ordered Alloy as a Buffer Layer. physica status solidi (a), 188 (2). 687-689 doi:10.1002/1521-396x(200112)188:23.0.co;2-k
In(2001, December) physica status solidi (a) Vol. 188 (2) Wiley

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As, D.J., K�hler, U., L�bbers, M., Mimkes, J., Lischka, K. (2001) p-Type Doping of Cubic GaN by Carbon. physica status solidi (a), 188 (2). 699-703 doi:10.1002/1521-396x(200112)188:2<699::aid-pssa699>3.0.co;2-8
Honda, T., Sato, K., Hashimoto, T., Shinohara, M., Kawanishi, H. (2001) GaN Growth by Compound Source MBE Using GaN Powder. physica status solidi (a), 188 (2). 587-590 doi:10.1002/1521-396x(200112)188:2<587::aid-pssa587>3.0.co;2-o
Harafuji, K. (2001) Gas-Phase and Surface Reactions in a Horizontal Reactor for GaN MOVPE Growth. physica status solidi (a), 188 (2). 635-639 doi:10.1002/1521-396x(200112)188:2<635::aid-pssa635>3.0.co;2-b
Murata, S., Ikenaga, M., Nakamura, K., Tachibana, A., Matsumoto, K. (2001) First-Principle Theoretical Study on Epitaxial Crystal Growth of GaN. physica status solidi (a), 188 (2). 579-582 doi:10.1002/1521-396x(200112)188:2<579::aid-pssa579>3.0.co;2-k
Setiagung, C., Wu, J., Onabe, K., Shiraki, Y. (2001) Selective Area Growth of GaN and Fabrication of GaN/AlGaN Quantum Wells on Grown Facets. physica status solidi (a), 188 (2). 719-723 doi:10.1002/1521-396x(200112)188:2<719::aid-pssa719>3.0.co;2-#
Tampo, H., Yamada, K., Ohnishi, K., Imanishi, Y., Asami, K., Asahi, H. (2001) Ammonia Source MBE Growth of Polycrystalline GaN p-n Junction. physica status solidi (a), 188 (2). 605-609 doi:10.1002/1521-396x(200112)188:2<605::aid-pssa605>3.0.co;2-n
Hageman, P.R., Haffouz, S., Kirilyuk, V., Grzegorczyk, A., Larsen, P.K. (2001) High Quality GaN Layers on Si(111) Substrates: AlN Buffer Layer Optimisation and Insertion of a SiN Intermediate Layer. physica status solidi (a), 188 (2). 523-526 doi:10.1002/1521-396x(200112)188:2<523::aid-pssa523>3.0.co;2-r
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