Reference Type | Journal (article/letter/editorial) |
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Title | Isotopically-Purified Si and 3C-SiC Film Growth by an Ion-Beam Deposition Method |
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Journal | physica status solidi (a) |
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Authors | Tsubouchi, N. | Author |
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Chayahara, A. | Author |
Mokuno, Y. | Author |
Kinomura, A. | Author |
Horino, Y. | Author |
Year | 2002 (January) | Volume | 189 |
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Issue | 1 |
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Publisher | Wiley |
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DOI | doi:10.1002/1521-396x(200201)189:1<169::aid-pssa169>3.0.co;2-6Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 5087273 | Long-form Identifier | mindat:1:5:5087273:4 |
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GUID | 0 |
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Full Reference | Tsubouchi, N., Chayahara, A., Mokuno, Y., Kinomura, A., Horino, Y. (2002) Isotopically-Purified Si and 3C-SiC Film Growth by an Ion-Beam Deposition Method. physica status solidi (a), 189 (1). 169-174 doi:10.1002/1521-396x(200201)189:1<169::aid-pssa169>3.0.co;2-6 |
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Plain Text | Tsubouchi, N., Chayahara, A., Mokuno, Y., Kinomura, A., Horino, Y. (2002) Isotopically-Purified Si and 3C-SiC Film Growth by an Ion-Beam Deposition Method. physica status solidi (a), 189 (1). 169-174 doi:10.1002/1521-396x(200201)189:13.0.co;2-6 |
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In | (2002, January) physica status solidi (a) Vol. 189 (1) Wiley |
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