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van Dyk, E.E., Leitch, A.W.R., Neethling, J.H. (2002) High Quality InxGa1?xAs Epitaxial Layers Grown on GaAs by MOVPE. physica status solidi (a), 189 (1). 223-231 doi:10.1002/1521-396x(200201)189:1<223::aid-pssa223>3.0.co;2-5

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Reference TypeJournal (article/letter/editorial)
TitleHigh Quality InxGa1?xAs Epitaxial Layers Grown on GaAs by MOVPE
Journalphysica status solidi (a)
Authorsvan Dyk, E.E.Author
Leitch, A.W.R.Author
Neethling, J.H.Author
Year2002 (January)Volume189
Issue1
PublisherWiley
DOIdoi:10.1002/1521-396x(200201)189:1<223::aid-pssa223>3.0.co;2-5Search in ResearchGate
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Mindat Ref. ID5087287Long-form Identifiermindat:1:5:5087287:7
GUID0
Full Referencevan Dyk, E.E., Leitch, A.W.R., Neethling, J.H. (2002) High Quality InxGa1?xAs Epitaxial Layers Grown on GaAs by MOVPE. physica status solidi (a), 189 (1). 223-231 doi:10.1002/1521-396x(200201)189:1<223::aid-pssa223>3.0.co;2-5
Plain Textvan Dyk, E.E., Leitch, A.W.R., Neethling, J.H. (2002) High Quality InxGa1?xAs Epitaxial Layers Grown on GaAs by MOVPE. physica status solidi (a), 189 (1). 223-231 doi:10.1002/1521-396x(200201)189:13.0.co;2-5
In(2002, January) physica status solidi (a) Vol. 189 (1) Wiley

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