Vote for your favorite mineral in #MinCup25! - Pollucite vs. Tugtupite
It's the cesium #pollucite against the optical changeling #tugtupite for this match.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Lulli, G., Bianconi, M., Solmi, S., Napolitani, E., Carnera, A. (2000) Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions. Journal of Applied Physics, 87 (12). 8461-8466 doi:10.1063/1.373564

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleVacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions
JournalJournal of Applied Physics
AuthorsLulli, G.Author
Bianconi, M.Author
Solmi, S.Author
Napolitani, E.Author
Carnera, A.Author
Year2000 (June 15)Volume87
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.373564Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5100327Long-form Identifiermindat:1:5:5100327:0
GUID0
Full ReferenceLulli, G., Bianconi, M., Solmi, S., Napolitani, E., Carnera, A. (2000) Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions. Journal of Applied Physics, 87 (12). 8461-8466 doi:10.1063/1.373564
Plain TextLulli, G., Bianconi, M., Solmi, S., Napolitani, E., Carnera, A. (2000) Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions. Journal of Applied Physics, 87 (12). 8461-8466 doi:10.1063/1.373564
In(2000, June) Journal of Applied Physics Vol. 87 (12) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Nipoti, R., Albertazzi, E., Bianconi, M., Lotti, R., Lulli, G., Cervera, M., Carnera, A. (1997) Ion implantation induced swelling in 6H-SiC. Applied Physics Letters, 70 (25). 3425-3427 doi:10.1063/1.119191
Lulli, G., Bianconi, M., Parisini, A., Napolitani, E. (2004) Structural characterization and modeling of damage accumulation in In implanted Si. Journal of Applied Physics, 95 (1). 150-155 doi:10.1063/1.1631076
Lulli, G., Albertazzi, E., Bianconi, M., Nipoti, R., Cervera, M., Carnera, A., Cellini, C. (1997) Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si. Journal of Applied Physics, 82 (12). 5958-5964 doi:10.1063/1.366498
Lulli, G., Bianconi, M., Parisini, A., Sama, S., Servidori, M. (2000) Damage profiles in high-energy As implanted Si. Journal of Applied Physics, 88 (7). 3993pp. doi:10.1063/1.1290712
Solmi, S., Bersani, M. (2000) Effects of donor concentration on transient enhanced diffusion of boron in silicon. Journal of Applied Physics, 87 (8). 3696-3699 doi:10.1063/1.372402
Impellizzeri, G., dos Santos, J. H. R., Mirabella, S., Priolo, F., Napolitani, E., Carnera, A. (2004) Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si. Applied Physics Letters, 84 (11). 1862-1864 doi:10.1063/1.1675935
Impellizzeri, G., Mirabella, S., Priolo, F., Napolitani, E., Carnera, A. (2006) Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion. Journal of Applied Physics, 99 (10). 103510pp. doi:10.1063/1.2199047
Angelucci, R., Negrini, P., Solmi, S. (1986) Transient enhanced diffusion of dopants in silicon induced by implantation damage. Applied Physics Letters, 49 (21). 1468-1470 doi:10.1063/1.97305
Lulli, G., Albertazzi, E., Bianconi, M., Ferri, M. (2003) Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions. Journal of Applied Physics, 94 (9). 6215-6217 doi:10.1063/1.1616632
Napolitani, E., Bisognin, G., Bruno, E., Mastromatteo, M., Scapellato, G. G., Boninelli, S., De Salvador, D., Mirabella, S., Spinella, C., Carnera, A., Priolo, F. (2010) Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge. Applied Physics Letters, 96 (20). 201906pp. doi:10.1063/1.3429084
Solmi, S., Ferri, M., Nobili, D., Bianconi, M. (2004) Damage and recovery in arsenic doped silicon after high energy Si+ implantation. Journal of Applied Physics, 96 (7). 3769-3774 doi:10.1063/1.1787140
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 8, 2025 01:16:02
Go to top of page