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Karwasz, G. P., Rurali, R., Consolati, G., Godignon, P. (2004) Defect dynamics in P+ implanted 6H-SiC studied by positron annihilation spectroscopy. physica status solidi (c), 1 (2). 257-260 doi:10.1002/pssc.200303939

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Reference TypeJournal (article/letter/editorial)
TitleDefect dynamics in P+ implanted 6H-SiC studied by positron annihilation spectroscopy
Journalphysica status solidi (c)
AuthorsKarwasz, G. P.Author
Rurali, R.Author
Consolati, G.Author
Godignon, P.Author
Year2004 (February)Volume1
Issue2
PublisherWiley
DOIdoi:10.1002/pssc.200303939Search in ResearchGate
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Mindat Ref. ID5108404Long-form Identifiermindat:1:5:5108404:4
GUID0
Full ReferenceKarwasz, G. P., Rurali, R., Consolati, G., Godignon, P. (2004) Defect dynamics in P+ implanted 6H-SiC studied by positron annihilation spectroscopy. physica status solidi (c), 1 (2). 257-260 doi:10.1002/pssc.200303939
Plain TextKarwasz, G. P., Rurali, R., Consolati, G., Godignon, P. (2004) Defect dynamics in P+ implanted 6H-SiC studied by positron annihilation spectroscopy. physica status solidi (c), 1 (2). 257-260 doi:10.1002/pssc.200303939
In(2004, February) physica status solidi (c) Vol. 1 (2) Wiley


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