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Chang, S. M., Cheng, S. L., Chen, L. J., Luo, C. H. (2001) Mechanisms for the improved stability of C54–TiSi2 on (001)Si by the addition of N2 to Ar during Ti sputtering. Journal of Applied Physics, 90 (4). 1779-1783 doi:10.1063/1.1385577

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Reference TypeJournal (article/letter/editorial)
TitleMechanisms for the improved stability of C54–TiSi2 on (001)Si by the addition of N2 to Ar during Ti sputtering
JournalJournal of Applied Physics
AuthorsChang, S. M.Author
Cheng, S. L.Author
Chen, L. J.Author
Luo, C. H.Author
Year2001 (August 15)Volume90
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.1385577Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5110103Long-form Identifiermindat:1:5:5110103:1
GUID0
Full ReferenceChang, S. M., Cheng, S. L., Chen, L. J., Luo, C. H. (2001) Mechanisms for the improved stability of C54–TiSi2 on (001)Si by the addition of N2 to Ar during Ti sputtering. Journal of Applied Physics, 90 (4). 1779-1783 doi:10.1063/1.1385577
Plain TextChang, S. M., Cheng, S. L., Chen, L. J., Luo, C. H. (2001) Mechanisms for the improved stability of C54–TiSi2 on (001)Si by the addition of N2 to Ar during Ti sputtering. Journal of Applied Physics, 90 (4). 1779-1783 doi:10.1063/1.1385577
In(2001, August) Journal of Applied Physics Vol. 90 (4) AIP Publishing

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Chang, S. M., Huang, H. Y., Yang, H. Y., Chen, L. J. (1999) Mechanism of enhanced formation of C54–TiSi2 in high-temperature deposited Ti thin films on preamorphized (001)Si. Applied Physics Letters, 74 (2). 224-226 doi:10.1063/1.123300
Cheng, S. L., Huang, H. Y., Peng, Y. C., Chen, L. J., Tsui, B. Y., Tsai, C. J., Guo, S. S. (1999) Effects of stress on the growth of TiSi2 thin films on (001)Si. Applied Physics Letters, 74 (10). 1406-1408 doi:10.1063/1.123565
d’Heurle, F. M., Zhang, S.-L., Lavoie, C., Gas, P., Cabral, C., Harper, J. M. E. (2001) Formation of C54 TiSi2: Effects of niobium additions on the apparent activation energy. Journal of Applied Physics, 90 (12). 6409-6415 doi:10.1063/1.1413952
Kittl, J. A., Gribelyuk, M. A., Samavedam, S. B. (1998) Mechanism of low temperature C54 TiSi2 formation bypassing C49 TiSi2: Effect of Si microstructure and Mo impurities on the Ti–Si reaction path. Applied Physics Letters, 73 (7). 900-902 doi:10.1063/1.122032
Quintero, A., Libera, M., Cabral, C., Lavoie, C., Harper, J. M. E. (2001) Two-step codeposition process for enhanced C54–TiSi2 formation in the Ti–Si binary system. Journal of Applied Physics, 89 (9). 4879-4885 doi:10.1063/1.1360698
Fung, M. S., Cheng, H. C., Chen, L. J. (1985) Localized epitaxial growth of C54 and C49 TiSi2on (111)Si. Applied Physics Letters, 47 (12). 1312-1314 doi:10.1063/1.96263
Chen, S. Y., Shen, Z. X., Chen, Z. D., Chan, L. H., See, A. K. (1999) Laser-induced direct formation of C54 TiSi2 films with fine grains on c-Si substrates. Applied Physics Letters, 75 (12). 1727-1729 doi:10.1063/1.124801
Liauh, H. R., Chen, M. C., Chen, J. F., Chen, L. J. (1993) Electrical and microstructural characteristics of Ti contacts on (001)Si. Journal of Applied Physics, 74 (4). 2590-2597 doi:10.1063/1.354672
Hsieh, Y. C., Chang, E. Y., Luo, G. L., Pilkuhn, M. H., Tang, S. S., Chang, C. Y., Yang, J. Y., Chung, H. W. (2007) Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1−x metamorphic buffer layer for the growth of Ge layer on Si substrate. Applied Physics Letters, 90 (8). 83507pp. doi:10.1063/1.2475361
Yu, T., Tan, S. C., Shen, Z. X., Chen, L. W., Lin, J. Y., See, A. K. (2002) Structural study of refractory-metal-free C40 TiSi2 and its transformation to C54 TiSi2. Applied Physics Letters, 80 (13). 2266-2268 doi:10.1063/1.1466521
Li, K., Chen, S. Y., Shen, Z. X. (2001) Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation. Applied Physics Letters, 78 (25). 3989-3991 doi:10.1063/1.1378309
 
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