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Brusa, R. S. (2007) Decorated vacancy clusters in Si and thin C films grown on Si studied by depth profiling positron annihilation spectroscopies. physica status solidi (c), 4 (10). 3614-3619 doi:10.1002/pssc.200675748

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Reference TypeJournal (article/letter/editorial)
TitleDecorated vacancy clusters in Si and thin C films grown on Si studied by depth profiling positron annihilation spectroscopies
Journalphysica status solidi (c)
AuthorsBrusa, R. S.Author
Year2007 (September)Volume4
Issue10
PublisherWiley
DOIdoi:10.1002/pssc.200675748Search in ResearchGate
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Mindat Ref. ID5113045Long-form Identifiermindat:1:5:5113045:9
GUID0
Full ReferenceBrusa, R. S. (2007) Decorated vacancy clusters in Si and thin C films grown on Si studied by depth profiling positron annihilation spectroscopies. physica status solidi (c), 4 (10). 3614-3619 doi:10.1002/pssc.200675748
Plain TextBrusa, R. S. (2007) Decorated vacancy clusters in Si and thin C films grown on Si studied by depth profiling positron annihilation spectroscopies. physica status solidi (c), 4 (10). 3614-3619 doi:10.1002/pssc.200675748
In(2007, September) physica status solidi (c) Vol. 4 (10) Wiley

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