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Frigeri, C., Pelosi, C., Germini, F., Attolini, G., Bosi, M. (2007) Combined (200) DF-TEM and X-ray diffraction investigations of interfaces in MOVPE grown InGaP/GaAs heterojunctions. physica status solidi (c), 4 (4). 1485-1489 doi:10.1002/pssc.200674152

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Reference TypeJournal (article/letter/editorial)
TitleCombined (200) DF-TEM and X-ray diffraction investigations of interfaces in MOVPE grown InGaP/GaAs heterojunctions
Journalphysica status solidi (c)
AuthorsFrigeri, C.Author
Pelosi, C.Author
Germini, F.Author
Attolini, G.Author
Bosi, M.Author
Year2007 (April)Volume4
Issue4
PublisherWiley
DOIdoi:10.1002/pssc.200674152Search in ResearchGate
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Mindat Ref. ID5114219Long-form Identifiermindat:1:5:5114219:9
GUID0
Full ReferenceFrigeri, C., Pelosi, C., Germini, F., Attolini, G., Bosi, M. (2007) Combined (200) DF-TEM and X-ray diffraction investigations of interfaces in MOVPE grown InGaP/GaAs heterojunctions. physica status solidi (c), 4 (4). 1485-1489 doi:10.1002/pssc.200674152
Plain TextFrigeri, C., Pelosi, C., Germini, F., Attolini, G., Bosi, M. (2007) Combined (200) DF-TEM and X-ray diffraction investigations of interfaces in MOVPE grown InGaP/GaAs heterojunctions. physica status solidi (c), 4 (4). 1485-1489 doi:10.1002/pssc.200674152
In(2007, April) physica status solidi (c) Vol. 4 (4) Wiley

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Frigeri, C., Attolini, G., Bosi, M., Pelosi, C., Germini, F. (2009) Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP∕GaAs: A Study by the Chemically Sensitive (200) Diffraction. Journal of the Electrochemical Society, 156. doi:10.1149/1.3111028
Frigeri, C., Attolini, G., Pelosi, C. (2003) Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPE. physica status solidi (a), 195 (1). 56-60 doi:10.1002/pssa.200306304
Pelosi, C., Attolini, G., Bosi, M., Frigeri, C., Bersani, M., Giubertoni, D., Vanzetti, L., Musayeva, N. (2005) Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures. Crystal Research and Technology, 40 (10) 982-986 doi:10.1002/crat.200410472
Frigeri, C., Shakhmin, A. A., Vinokurov, D. A., Zamoryanskaya, M. V. (2011) CL and dark field TEM analysis of composition change at interfaces in InGaP/GaAs junctions grown by MOCVD. physica status solidi (c), 8 (4). 1269-1272 doi:10.1002/pssc.201084004
Attolini, G., Bocchi, C., Germini, F., Pelosi, C., Parisini, A., Tarricone, L., Kùdela, R., Hasenohrl, S. (2000) Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE. Materials Chemistry and Physics, 66. 246-252 doi:10.1016/s0254-0584(00)00319-9
Bosi, M., Attolini, G., Ferrari, C., Frigeri, C., Rimada Herrera, J.C., Gombia, E., Pelosi, C., Peng, R.W. (2008) MOVPE growth of homoepitaxial germanium. Journal of Crystal Growth, 310 (14). 3282-3286 doi:10.1016/j.jcrysgro.2008.04.009
Scardova, S., Pelosi, C., Attolini, G., Lo, B., Martinez, O., Martín, E., Ardila, A. M., Jiménez, J. (2003) Optical and morphological characteristics of LP MOVPE grown lattice matched GaInP/GaAs heterostructures. physica status solidi (a), 195 (1). 50-55 doi:10.1002/pssa.200306285
Pelosi, C., Attolini, G., Frigeri, C., Bersani, M., Giubertoni, D., Vanzetti, L., Kudela, R. (2004) In-depth analysis of the interfaces in InGaP/GaAs heterosystems. The European Physical Journal Applied Physics, 27 (1). 379-383 doi:10.1051/epjap:2004143
Kuboya, S., Thieu, Q. T., Nakajima, F., Katayama, R., Onabe, K. (2007) InAsN quantum dots grown on GaAs(001) substrates by MOVPE. physica status solidi (c), 4 (7). 2387-2390 doi:10.1002/pssc.200674820
Jóźwiak, G., Dąbrowska-Szata, M., Gelczuk, Ł. (2007) High resolution transient analysis for “localized” states at the extended defects in InGaAs/GaAs heterostructures grown by MOVPE. physica status solidi (c), 4 (8). 2888-2892 doi:10.1002/pssc.200675468
Hasenöhrl, S., Betko, J., Morvic, M., Novák, J., J.Fedor, (2004) Resistivity and mobility in ordered InGaP grown by MOVPE. physica status solidi (c), 1 (2). 382-387 doi:10.1002/pssc.200303974
 
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