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Kröger, R., Paskova, T., Monemar, B., Figge, S., Hommel, D., Rosenauer, A. (2007) Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire. physica status solidi (c), 4 (7). 2564-2567 doi:10.1002/pssc.200674909

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Reference TypeJournal (article/letter/editorial)
TitleDefect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire
Journalphysica status solidi (c)
AuthorsKröger, R.Author
Paskova, T.Author
Monemar, B.Author
Figge, S.Author
Hommel, D.Author
Rosenauer, A.Author
Year2007 (June)Volume4
Issue7
PublisherWiley
DOIdoi:10.1002/pssc.200674909Search in ResearchGate
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Mindat Ref. ID5114775Long-form Identifiermindat:1:5:5114775:0
GUID0
Full ReferenceKröger, R., Paskova, T., Monemar, B., Figge, S., Hommel, D., Rosenauer, A. (2007) Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire. physica status solidi (c), 4 (7). 2564-2567 doi:10.1002/pssc.200674909
Plain TextKröger, R., Paskova, T., Monemar, B., Figge, S., Hommel, D., Rosenauer, A. (2007) Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire. physica status solidi (c), 4 (7). 2564-2567 doi:10.1002/pssc.200674909
In(2007, June) physica status solidi (c) Vol. 4 (7) Wiley

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Kröger, R., Paskova, T., Figge, S., Hommel, D., Rosenauer, A., Monemar, B. (2007) Interfacial structure of a-plane GaN grown on r-plane sapphire. Applied Physics Letters, 90 (8). 81918pp. doi:10.1063/1.2696309
Kröger, R., Paskova, T., Figge, S., Hommel, D., Rosenauer, A., Monemar, B. (2007) Erratum: “Interfacial structure of a-plane GaN grown on r-plane sapphire” [Appl. Phys. Lett. 90, 081918 (2007)]. Applied Physics Letters, 90 (24). 249901pp. doi:10.1063/1.2744473
Roder, C., Einfeldt, S., Figge, S., Hommel, D., Paskova, T., Monemar, B., Haskell, B. A., Fini, P. T., Speck, J. S., Nakamura, S. (2006) Strain ina-plane GaN layers grown onr-plane sapphire substrates. physica status solidi (a), 203 (7). 1672-1675 doi:10.1002/pssa.200565447
Araki, Masahiro, Hoshino, Katsuyuki, Tadatomo, Kazuyuki (2007) Direct growth ofa-plane GaN onr-plane sapphire substrate by metalorganic vapor phase epitaxy. physica status solidi (c), 4 (7). 2540-2543 doi:10.1002/pssc.200674829
Tuomisto, F., Paskova, T., Figge, S., Hommel, D., Monemar, B. (2007) Vacancy defect distribution in heteroepitaxial -plane GaN grown by hydride vapor phase epitaxy. Journal of Crystal Growth, 300 (1). 251-253 doi:10.1016/j.jcrysgro.2006.11.040
Paskov, P. P., Schifano, R., Malinauskas, T., Paskova, T., Bergman, J. P., Monemar, B., Figge, S., Hommel, D., Haskell, B. A., Fini, P. T., Speck, J. S., Nakamura, S. (2006) Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers. physica status solidi (c), 3 (6). 1499-1502 doi:10.1002/pssc.200565416
Kusakabe, K., Furuzuki, T., Ohkawa, K. (2007) Cathodoluminescence characterization of [110]-oriented InGaN/GaN thin films grown onr-plane sapphire substrates by metalorganic vapor-phase epitaxy. physica status solidi (c), 4 (7). 2544-2547 doi:10.1002/pssc.200674830
Tuomisto, F., Paskova, T., Kröger, R., Figge, S., Hommel, D., Monemar, B., Kersting, R. (2007) Defect distribution in a-plane GaN on Al2O3. Applied Physics Letters, 90 (12). 121915pp. doi:10.1063/1.2715128
Watanabe, S., Kumagai, Y., Tsuyuguchi, A., Na, H., Naoi, H., Araki, T., Nanishi, Y. (2007) Microstructure ofA-plane InN grown onR-plane sapphire by ECR-MBE. physica status solidi (c), 4 (7). 2556-2559 doi:10.1002/pssc.200674903
Kusakabe, K., Ohkawa, K. (2006) Morphological evaluation of epitaxial GaN grown onr -plane sapphire by metalorganic vapor-phase epitaxy. physica status solidi (c), 3 (6). 1807-1810 doi:10.1002/pssc.200565235
Paskov, P. P., Schifano, R., Monemar, B., Paskova, T., Figge, S., Hommel, D. (2005) Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition. Journal of Applied Physics, 98 (9). 93519pp. doi:10.1063/1.2128496
 
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