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Feklisova, O. V., Yakimov, E. B. (2007) Electrical properties of dislocation trails in n-Si. physica status solidi (c), 4 (8). 3105-3109 doi:10.1002/pssc.200675464

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Reference TypeJournal (article/letter/editorial)
TitleElectrical properties of dislocation trails in n-Si
Journalphysica status solidi (c)
AuthorsFeklisova, O. V.Author
Yakimov, E. B.Author
Year2007 (July)Volume4
Issue8
PublisherWiley
DOIdoi:10.1002/pssc.200675464Search in ResearchGate
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Mindat Ref. ID5114844Long-form Identifiermindat:1:5:5114844:9
GUID0
Full ReferenceFeklisova, O. V., Yakimov, E. B. (2007) Electrical properties of dislocation trails in n-Si. physica status solidi (c), 4 (8). 3105-3109 doi:10.1002/pssc.200675464
Plain TextFeklisova, O. V., Yakimov, E. B. (2007) Electrical properties of dislocation trails in n-Si. physica status solidi (c), 4 (8). 3105-3109 doi:10.1002/pssc.200675464
In(2007, July) physica status solidi (c) Vol. 4 (8) Wiley

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Feklisova, O. V., Yakimov, E. B. (2009) Effect of dislocation trails on gold diffusion in Si. physica status solidi (c), 6 (8). 1823-1826 doi:10.1002/pssc.200881443
Feklisova, O. V., Orlov, V. I., Yakimov, E. B. (2015) EBIC and LBIC investigations of dislocation trails in Si. physica status solidi (c), 12 (8). 1081-1084 doi:10.1002/pssc.201400223
Orlov, V. I., Yakimov, E. B., Yarykin, N. (2017) Dislocation trails in Si: Geometry and electrical properties. physica status solidi c, 14 (7) 1700074pp. doi:10.1002/pssc.201700074
Feklisova, O. V., Yu, X., Yang, D., Yakimov, E. B. (2012) Effect of metal contamination on recombination properties of extended defects in multicrystalline Si. physica status solidi (c), 9 (10). 1942-1946 doi:10.1002/pssc.201200138
Eremenko, V., Yakimov, E., Abrosimov, N. (2007) Structure and recombination properties of extended defects in the dislocation slip plane in silicon. physica status solidi (c), 4 (8). 3100-3104 doi:10.1002/pssc.200675462
Feklisova, O. V., Pichaud, B., Yakimov, E. B. (2005) Annealing effect on the electrical activity of extended defects in plastically deformed p-Si with low dislocation density. physica status solidi (a), 202 (5). 896-900 doi:10.1002/pssa.200460511
Koveshnikov, S. V., Feklisova, O. V., Yakimov, E. B., Yarykin, N. A. (1991) Spatial distribution of dislocation-related centers in plastically deformed silicon. physica status solidi (a), 127 (1). 67-73 doi:10.1002/pssa.2211270107
Brantov, Sergey, Feklisova, Olga, Yakimov, Eugene (2011) Characterization of silicon ribbon by the SEM methods. physica status solidi (c), 8 (4). 1384-1387 doi:10.1002/pssc.201083996
Gruzintsev, A. N., Red'kin, A. N., Yakimov, E. E., Yakimov, E. B. (2011) Cathodoluminescence study of individual ZnO nanorods. physica status solidi (c), 8 (4). 1403-1406 doi:10.1002/pssc.201084006
Yakimov, E. B. (2009) Profile of EBIC dislocation contrast in semiconductors with small diffusion length. physica status solidi (c), 6 (8). 1983-1986 doi:10.1002/pssc.200881451
Feklisova, O. V., Mariani-Regula, G., Pichaud, B., Yakimov, E. B. (1999) Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon. physica status solidi (a), 171 (1). 341-346 doi:10.1002/(sici)1521-396x(199901)171:1<341::aid-pssa341>3.0.co;2-9
 
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