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Dekker, J., Dumitrescu, M., Tukiainen, A., Orsila, S., Uusimaa, P., Pessa, M., Tkachenko, N. V., Lemmetyinen, H. (2002) Subthreshold carrier losses from GaInP quantum wells measured by time resolved photoluminescence. Journal of Applied Physics, 92 (1). 173-179 doi:10.1063/1.1459743

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Reference TypeJournal (article/letter/editorial)
TitleSubthreshold carrier losses from GaInP quantum wells measured by time resolved photoluminescence
JournalJournal of Applied Physics
AuthorsDekker, J.Author
Dumitrescu, M.Author
Tukiainen, A.Author
Orsila, S.Author
Uusimaa, P.Author
Pessa, M.Author
Tkachenko, N. V.Author
Lemmetyinen, H.Author
Year2002 (July)Volume92
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1459743Search in ResearchGate
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Mindat Ref. ID5114964Long-form Identifiermindat:1:5:5114964:2
GUID0
Full ReferenceDekker, J., Dumitrescu, M., Tukiainen, A., Orsila, S., Uusimaa, P., Pessa, M., Tkachenko, N. V., Lemmetyinen, H. (2002) Subthreshold carrier losses from GaInP quantum wells measured by time resolved photoluminescence. Journal of Applied Physics, 92 (1). 173-179 doi:10.1063/1.1459743
Plain TextDekker, J., Dumitrescu, M., Tukiainen, A., Orsila, S., Uusimaa, P., Pessa, M., Tkachenko, N. V., Lemmetyinen, H. (2002) Subthreshold carrier losses from GaInP quantum wells measured by time resolved photoluminescence. Journal of Applied Physics, 92 (1). 173-179 doi:10.1063/1.1459743
In(2002, July) Journal of Applied Physics Vol. 92 (1) AIP Publishing

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Dekker, J., Tukiainen, A., Xiang, N., Orsila, S., Saarinen, M., Toivonen, M., Pessa, M., Tkachenko, N., Lemmetyinen, H. (1999) Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy. Journal of Applied Physics, 86 (7). 3709-3713 doi:10.1063/1.371283
Pavelescu, E.-M., Gheorghiu, A., Dumitrescu, M., Tukiainen, A., Jouhti, T., Hakkarainen, T., Kudrawiec, R., Andrzejewski, J., Misiewicz, J., Tkachenko, N., Dhaka, V. D. S., Lemmetyinen, H., Pessa, M. (2004) Electron-irradiation enhanced photoluminescence from GaInNAs∕GaAs quantum wells subject to thermal annealing. Applied Physics Letters, 85 (25). 6158-6160 doi:10.1063/1.1834997
Orsila, S., Tukiainen, A., Uusimaa, P., Dekker, J., Leinonen, T., Pessa, M. (2001) Growth of GaInP on misoriented substrates using solid source MBE. Journal of Crystal Growth, 227. 249-254 doi:10.1016/s0022-0248(01)00692-3
Guina, M., Dekker, J., Tukiainen, A., Orsila, S., Saarinen, M., Dumitrescu, M., Sipilä, P., Savolainen, P., Pessa, M. (2001) Influence of deep level impurities on modulation response of InGaP light emitting diodes. Journal of Applied Physics, 89 (2). 1151-1155 doi:10.1063/1.1332091
Dekker, J., Oila, J., Saarinen, K., Tukiainen, A., Li, W., Pessa, M. (2002) Cation and anion vacancies in proton irradiated GaInP. Journal of Applied Physics, 92 (10). 5942-5949 doi:10.1063/1.1515123
Dekker, J. R., Tukiainen, A., Jaakkola, R., Väkeväinen, K., Lammasniemi, J., Pessa, M. (1998) Majority carrier traps in proton-irradiated GaInP. Applied Physics Letters, 73 (24). 3559-3561 doi:10.1063/1.122806
Dhaka, V D S, Tkachenko, N V, Pavelescu, E-M, Lemmetyinen, H, Hakkarainen, T, Guina, M, Konttinen, J, Okhotnikov, O, Pessa, M, Arstila, K, Keinonen, J (2005) Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics. New Journal of Physics, 7. 131 doi:10.1088/1367-2630/7/1/131
Orsila, S, Leinonen, T, Uusimaa, P, Saarinen, M, Guina, M, Sipilä, P, Vilokkinen, V, Melanen, P, Dumitrescu, M, Pessa, M (2001) Resonant cavity light-emitting diodes grown by solid source MBE. Journal of Crystal Growth, 227. 346-351 doi:10.1016/s0022-0248(01)00719-9
Toikkanen, L., Leinonen, T., Tukiainen, A., Viitala, S., Pessa, M. (2004) Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation. Journal of Crystal Growth, 265 (3). 410-419 doi:10.1016/j.jcrysgro.2004.02.089
Dhaka, V D S, Tkachenko, N V, Lemmetyinen, H, Pavelescu, E-M, Suomalainen, S, Pessa, M, Arstila, K, Nordlund, K, Keinonen, J (2006) Ultrafast dynamics of Ni+-irradiated and annealed GaInAs/InP multiple quantum wells. Journal of Physics D: Applied Physics, 39. 2659-2663 doi:10.1088/0022-3727/39/13/004
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