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Tagliente, M. A., De Caro, L., Tapfer, L., Waltereit, P., Brandt, O., Ploog, K.-H. (2002) Strain field and chemical composition determination of InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates. Journal of Applied Physics, 92 (1). 70-76 doi:10.1063/1.1478789

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Reference TypeJournal (article/letter/editorial)
TitleStrain field and chemical composition determination of InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates
JournalJournal of Applied Physics
AuthorsTagliente, M. A.Author
De Caro, L.Author
Tapfer, L.Author
Waltereit, P.Author
Brandt, O.Author
Ploog, K.-H.Author
Year2002 (July)Volume92
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1478789Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5114976Long-form Identifiermindat:1:5:5114976:7
GUID0
Full ReferenceTagliente, M. A., De Caro, L., Tapfer, L., Waltereit, P., Brandt, O., Ploog, K.-H. (2002) Strain field and chemical composition determination of InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates. Journal of Applied Physics, 92 (1). 70-76 doi:10.1063/1.1478789
Plain TextTagliente, M. A., De Caro, L., Tapfer, L., Waltereit, P., Brandt, O., Ploog, K.-H. (2002) Strain field and chemical composition determination of InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates. Journal of Applied Physics, 92 (1). 70-76 doi:10.1063/1.1478789
In(2002, July) Journal of Applied Physics Vol. 92 (1) AIP Publishing

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Tagliente, M A, Tapfer, L, Waltereit, P, Brandt, O, Ploog, K-H (2003) Structural properties of InxGa1 xN/GaN and AlxGa1 xN/GaN MQWs studied by XRD. Journal of Physics D: Applied Physics, 36. doi:10.1088/0022-3727/36/10a/339
Dhar, S., Jahn, U., Brandt, O., Waltereit, P., Ploog, K. H. (2002) Influence of exciton localization on the quantum efficiency of GaN/(In,Ga)N multiple quantum wells grown by molecular-beam epitaxy. Applied Physics Letters, 81 (4). 673-675 doi:10.1063/1.1493237
Waltereit, Patrick, Brandt, Oliver, Ploog, Klaus H., Tagliente, Maria Antonia, Tapfer, Leander (2002) In surface segregation during growth of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular beam epitaxy. Physical Review B, 66 (16) doi:10.1103/physrevb.66.165322
Waltereit, P., Brandt, O., Ploog, K.H., Tagliente, M.A., Tapfer, L. (2001) Indium Surface Segregation during Growth of (In,Ga)N/GaN Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy. physica status solidi (b), 228 (1). 49-53 doi:10.1002/1521-3951(200111)228:1<49::aid-pssb49>3.0.co;2-c
Waltereit, P., Brandt, O., Trampert, A., Ramsteiner, M., Reiche, M., Qi, M., Ploog, K. H. (1999) Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001). Applied Physics Letters, 74 (24). 3660-3662 doi:10.1063/1.123214
Waltereit, P., Brandt, O., Ploog, K. H. (1999) Violet and blue emitting (In,Ga)N/GaN multiple quantum wells grown on γ-LiAlO2(100) by radio frequency plasma-assisted molecular beam epitaxy. Applied Physics Letters, 75 (14). 2029-2031 doi:10.1063/1.124905
Ghosh, Sandip, Waltereit, P., Brandt, O., Grahn, H. T., Ploog, K. H. (2002) Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO2. Applied Physics Letters, 80 (3). 413-415 doi:10.1063/1.1434306
Rau, B., Waltereit, P., Brandt, O., Ramsteiner, M., Ploog, K. H., Puls, J., Henneberger, F. (2000) In-plane polarization anisotropy of the spontaneous emission of M-plane GaN/(Al,Ga)N quantum wells. Applied Physics Letters, 77 (21). 3343-3345 doi:10.1063/1.1326846
Rivera, C., Pau, J. L., Muñoz, E., Misra, P., Brandt, O., Grahn, H. T., Ploog, K. H. (2006) Polarization-sensitive ultraviolet photodetectors based on M-plane GaN grown on LiAlO2 substrates. Applied Physics Letters, 88 (21). 213507pp. doi:10.1063/1.2206128
Dhar, S., Jahn, U., Brandt, O., Waltereit, P., Ploog, K.H. (2002) Effect of Exciton Localization on the Quantum Efficiency of GaN/(In,Ga)N Multiple Quantum Wells. physica status solidi (a), 192 (1). 85-90 doi:10.1002/1521-396x(200207)192:1<85::aid-pssa85>3.0.co;2-r
Cho, H. K., Lee, J. Y., Kim, C. S., Yang, G. M. (2002) Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition. Journal of Applied Physics, 91 (3). 1166-1170 doi:10.1063/1.1429765
 
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