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Yu, Xuegong, Yang, Deren, Ma, Xiangyang, Yang, Jiansong, Li, Liben, Que, Duanlin (2002) Grown-in defects in nitrogen-doped Czochralski silicon. Journal of Applied Physics, 92 (1). 188-194 doi:10.1063/1.1481190

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Reference TypeJournal (article/letter/editorial)
TitleGrown-in defects in nitrogen-doped Czochralski silicon
JournalJournal of Applied Physics
AuthorsYu, XuegongAuthor
Yang, DerenAuthor
Ma, XiangyangAuthor
Yang, JiansongAuthor
Li, LibenAuthor
Que, DuanlinAuthor
Year2002 (July)Volume92
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1481190Search in ResearchGate
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Mindat Ref. ID5115004Long-form Identifiermindat:1:5:5115004:6
GUID0
Full ReferenceYu, Xuegong, Yang, Deren, Ma, Xiangyang, Yang, Jiansong, Li, Liben, Que, Duanlin (2002) Grown-in defects in nitrogen-doped Czochralski silicon. Journal of Applied Physics, 92 (1). 188-194 doi:10.1063/1.1481190
Plain TextYu, Xuegong, Yang, Deren, Ma, Xiangyang, Yang, Jiansong, Li, Liben, Que, Duanlin (2002) Grown-in defects in nitrogen-doped Czochralski silicon. Journal of Applied Physics, 92 (1). 188-194 doi:10.1063/1.1481190
In(2002, July) Journal of Applied Physics Vol. 92 (1) AIP Publishing

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Yang, Deren, Yu, Xuegong, Ma, Xiangyang, Xu, Jin, Li, Liben, Que, Duanlin (2002) Germanium effect on void defects in Czochralski silicon. Journal of Crystal Growth, 243 (3). 371-374 doi:10.1016/s0022-0248(02)01572-5
Wang, Hongjie, Yang, Deren, Yu, Xuegong, Ma, Xiangyang, Tian, Daxi, Shen, Yijun, Li, Liben, Que, Duanlin (2004) Effect of oxygen precipitates and induced dislocations on oxidation-induced stacking faults in nitrogen-doped Czochralski silicon. Journal of Applied Physics, 96 (5). 3031-3033 doi:10.1063/1.1777804
Yu, Xuegong, Ma, Xiangyang, Li, Chunlong, Yang, Jiansong, Yang, Deren (2004) Grown-in Defects in Heavily Boron-Doped Czochralski Silicon. Japanese Journal of Applied Physics, 43 (7) 4082-4086 doi:10.1143/jjap.43.4082
Li, Hong, Yang, Deren, Ma, Xiangyang, Yu, Xuegong, Que, Duanlin (2004) Germanium effect on oxygen precipitation in Czochralski silicon. Journal of Applied Physics, 96 (8). 4161-4165 doi:10.1063/1.1790578
Wang, Weiyan, Yang, Deren, Ma, Xiangyang, Que, Duanlin (2008) Copper precipitation in nitrogen-doped Czochralski silicon. Journal of Applied Physics, 104 (1). 13508pp. doi:10.1063/1.2949402
Li, Hong, Yang, Deren, Yu, Xuegong, Ma, Xiangyang, Tian, Daxi, Li, Liben, Que, Duanlin (2004) The effect of germanium doping on oxygen donors in Czochralski-grown silicon. Journal of Physics: Condensed Matter, 16 (32). 5745-5750 doi:10.1088/0953-8984/16/32/011
Wang, Weiyan, Yang, Deren, Yu, Xuegong, Ma, Xiangyang, Que, Duanlin (2007) Effect of point defects on copper-related deep levels in p-type Czochralski silicon. Journal of Applied Physics, 102 (7). 73521pp. doi:10.1063/1.2786126
Yu, Xuegong, Yang, Deren, Ma, Xiangyang, Li, Hong, Shen, Yijun, Tian, Daxi, Li, Liben, Que, Duanlin (2003) Intrinsic gettering in germanium-doped Czochralski crystal silicon crystals. Journal of Crystal Growth, 250 (3). 359-363 doi:10.1016/s0022-0248(02)02487-9
Yang, Deren, Chen, Jiahe, Li, Hong, Ma, Xiangyang, Tian, Daxi, Li, Liben, Que, Duanlin (2006) Micro-defects in Ge doped Czochralski grown Si crystals. Journal of Crystal Growth, 292 (2). 266-271 doi:10.1016/j.jcrysgro.2006.04.010
Yu, Xuegong, Yang, Deren, Ma, Xiangyang, Fan, Ruixin, Que, Duanlin (2003) Bipolar Structure in Thermally Treated Czochralski Silicon Wafer. Japanese Journal of Applied Physics, 42. 1129-1132 doi:10.1143/jjap.42.1129
Yang, Deren, Ma, Xiangyang, Fan, Ruixin, Zhang, Jinxin, Li, Liben, Que, Duanlin (1999) Oxygen precipitation in nitrogen-doped Czochralski silicon. Physica B: Condensed Matter, 273. 308-311 doi:10.1016/s0921-4526(99)00453-6
 
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