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Folkes, Patrick A., Gumbs, Godfrey, Xu, Wen (2002) Photoinduced band-bending effect of low temperature GaAs on AlGaAs/InGaAs/GaAs modulation-doped transistors. Journal of Applied Physics, 92 (1). 632-634 doi:10.1063/1.1483132

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Reference TypeJournal (article/letter/editorial)
TitlePhotoinduced band-bending effect of low temperature GaAs on AlGaAs/InGaAs/GaAs modulation-doped transistors
JournalJournal of Applied Physics
AuthorsFolkes, Patrick A.Author
Gumbs, GodfreyAuthor
Xu, WenAuthor
Year2002 (July)Volume92
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1483132Search in ResearchGate
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Mindat Ref. ID5115079Long-form Identifiermindat:1:5:5115079:0
GUID0
Full ReferenceFolkes, Patrick A., Gumbs, Godfrey, Xu, Wen (2002) Photoinduced band-bending effect of low temperature GaAs on AlGaAs/InGaAs/GaAs modulation-doped transistors. Journal of Applied Physics, 92 (1). 632-634 doi:10.1063/1.1483132
Plain TextFolkes, Patrick A., Gumbs, Godfrey, Xu, Wen (2002) Photoinduced band-bending effect of low temperature GaAs on AlGaAs/InGaAs/GaAs modulation-doped transistors. Journal of Applied Physics, 92 (1). 632-634 doi:10.1063/1.1483132
In(2002, July) Journal of Applied Physics Vol. 92 (1) AIP Publishing

See Also

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Lour, Wen-Shiung (1996) Comparison of GaAs, InGaAs, and GaAs/InGaAs Doped Channel Field-Effect Transistors with AlGaAs Insulator Gate. Japanese Journal of Applied Physics, 35. 5991-5994 doi:10.1143/jjap.35.5991
Folkes, P. A., Gumbs, Godfrey, Xu, Wen, Taysing-Lara, M. (2006) Measurement of the GaSb surface band bending potential from the magnetotransport characteristics of GaSb–InAs–AlSb quantum wells. Applied Physics Letters, 89 (20). 202113pp. doi:10.1063/1.2388147
Schweizer, T., Köhler, K., Ganser, P. (1992) Principle differences between the transport properties of normal AlGaAs/InGaAs/GaAs and inverted GaAs/InGaAs/AlGaAs modulation doped heterostructures. Applied Physics Letters, 60 (4). 469-471 doi:10.1063/1.106637
Chin, Albert, Martin, Paul, Ho, Pin, Ballingall, Jim, Yu, Tan‐hua, Mazurowski, John (1991) High quality (111)B GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a GaAs/InGaAs/GaAs quantum well. Applied Physics Letters, 59 (15). 1899-1901 doi:10.1063/1.106182
Py, M. A., Buehlmann, H.‐J. (1996) Evidence for screening effects on the 1/fcurrent noise in GaAs/AlGaAs modulation doped field effect transistors. Journal of Applied Physics, 80 (3). 1583-1593 doi:10.1063/1.362955
Fu, Y., Wang, T. H., Willander, M. (2001) Designing two-dimensional electron gases in GaAs/InGaAs/AlGaAs, ÎŽ-doped AlGaAs/GaAs, and AlGaAs/InGaAs/GaAs heterostructures for single electron transistor application. Journal of Applied Physics, 89 (3). 1759pp. doi:10.1063/1.1328787
Höpfel, R. A., Shah, J., Gossard, A. C., Wiegmann, W. (1985) Electroreflectance of GaAs‐AlGaAs modulation‐doped field‐effect transistors. Applied Physics Letters, 47 (2). 163-165 doi:10.1063/1.96249
Lour, Wen-Shiung, Chen, H. R., Hung, Ling-Tze (1997) Characterization of Graded Pulse-Doped Channel AlGaAs/InGaAs/GaAs Heterojunction Field-Effect Transistors. Japanese Journal of Applied Physics, 36. 975-979 doi:10.1143/jjap.36.975
GilpĂ©rez, J. M., SĂĄnchez‐Rojas, J. L., Muñoz, E., Calleja, E., David, J. P. R., Hill, G., CastagnĂ©, J. (1992) Photoluminescence characterization of gated pseudomorphic AlGaAs/InGaAs/GaAs modulation‐doped field‐effect transistors. Applied Physics Letters, 61 (10). 1225-1227 doi:10.1063/1.107602
Folkes, P. A., Smith, Doran, Lux, R. A., Zhou, W., Thompson, R., Moerkirk, R., Lemeune, M., Cooke, P., Brown, K. (1996) Back‐gating effect of low‐temperature GaAs on a pseudomorphic modulation‐doped field‐effect transistor. Applied Physics Letters, 69 (15). 2234-2236 doi:10.1063/1.117138
Chan, K. T., Lightner, M. J., Patterson, G. A., Yu, K. M. (1990) Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation‐doped field‐effect transistor structures. Applied Physics Letters, 56 (20). 2022-2024 doi:10.1063/1.103005
 
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