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Mohamed, Mohamed, Martin, Pierre, Ravaioli, Umberto (2008) 3D Monte Carlo simulation of transport in electro-statically confined silicon nanochannels. physica status solidi (c), 5 (1). 39-42 doi:10.1002/pssc.200776569

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Reference TypeJournal (article/letter/editorial)
Title3D Monte Carlo simulation of transport in electro-statically confined silicon nanochannels
Journalphysica status solidi (c)
AuthorsMohamed, MohamedAuthor
Martin, PierreAuthor
Ravaioli, UmbertoAuthor
Year2008 (January)Volume5
Issue1
PublisherWiley
DOIdoi:10.1002/pssc.200776569Search in ResearchGate
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Mindat Ref. ID5115097Long-form Identifiermindat:1:5:5115097:6
GUID0
Full ReferenceMohamed, Mohamed, Martin, Pierre, Ravaioli, Umberto (2008) 3D Monte Carlo simulation of transport in electro-statically confined silicon nanochannels. physica status solidi (c), 5 (1). 39-42 doi:10.1002/pssc.200776569
Plain TextMohamed, Mohamed, Martin, Pierre, Ravaioli, Umberto (2008) 3D Monte Carlo simulation of transport in electro-statically confined silicon nanochannels. physica status solidi (c), 5 (1). 39-42 doi:10.1002/pssc.200776569
In(2008, January) physica status solidi (c) Vol. 5 (1) Wiley

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