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Venugopal, R., Ren, Z., Datta, S., Lundstrom, M. S., Jovanovic, D. (2002) Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches. Journal of Applied Physics, 92 (7). 3730-3739 doi:10.1063/1.1503165

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Reference TypeJournal (article/letter/editorial)
TitleSimulating quantum transport in nanoscale transistors: Real versus mode-space approaches
JournalJournal of Applied Physics
AuthorsVenugopal, R.Author
Ren, Z.Author
Datta, S.Author
Lundstrom, M. S.Author
Jovanovic, D.Author
Year2002 (October)Volume92
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.1503165Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5116811Long-form Identifiermindat:1:5:5116811:5
GUID0
Full ReferenceVenugopal, R., Ren, Z., Datta, S., Lundstrom, M. S., Jovanovic, D. (2002) Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches. Journal of Applied Physics, 92 (7). 3730-3739 doi:10.1063/1.1503165
Plain TextVenugopal, R., Ren, Z., Datta, S., Lundstrom, M. S., Jovanovic, D. (2002) Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches. Journal of Applied Physics, 92 (7). 3730-3739 doi:10.1063/1.1503165
In(2002, October) Journal of Applied Physics Vol. 92 (7) AIP Publishing

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Venugopal, R., Paulsson, M., Goasguen, S., Datta, S., Lundstrom, M. S. (2003) A simple quantum mechanical treatment of scattering in nanoscale transistors. Journal of Applied Physics, 93 (9). 5613-5625 doi:10.1063/1.1563298
Venugopal, R., Goasguen, S., Datta, S., Lundstrom, M. S. (2004) Quantum mechanical analysis of channel access geometry and series resistance in nanoscale transistors. Journal of Applied Physics, 95 (1). 292-305 doi:10.1063/1.1631754
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Liang, Gengchiau, Neophytou, Neophytos, Lundstrom, Mark S., Nikonov, Dmitri E. (2007) Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation. Journal of Applied Physics, 102 (5). 54307pp. doi:10.1063/1.2775917
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Cahay, M., McLennan, M., Datta, S., Lundstrom, M. S. (1987) Importance of space‐charge effects in resonant tunneling devices. Applied Physics Letters, 50 (10). 612-614 doi:10.1063/1.98097
Bandyopadhyay, S., Maziar, C. M., Datta, S., Lundstrom, M. S. (1986) An analytical technique for calculating high‐field transport parameters in semiconductors. Journal of Applied Physics, 60 (1). 278-284 doi:10.1063/1.337641
Harmon, E. S., Melloch, M. R., Lundstrom, M. S., Cardone, F. (1994) Thermal velocity limits to diffusive electron transport in thin‐basenp+nGaAs bipolar transistors. Applied Physics Letters, 64 (2). 205-207 doi:10.1063/1.111505
Nishiguchi, K., Oda, S. (2002) Ballistic transport in silicon vertical transistors. Journal of Applied Physics, 92 (3). 1399-1405 doi:10.1063/1.1489496
Guo, Jing, Lundstrom, Mark, Datta, Supriyo (2002) Performance projections for ballistic carbon nanotube field-effect transistors. Applied Physics Letters, 80 (17). 3192-3194 doi:10.1063/1.1474604
Ahn, Phil-Hun, Hong, Sung-Min (2025) Nonequilibrium ac quantum transport in nanoscale transistors. Journal of Applied Physics, 137 (7). doi:10.1063/5.0245567
 
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