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Tanikawa, T., Hikosaka, T., Honda, Y., Yamaguchi, M., Sawaki, N. (2008) Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE. physica status solidi (c), 5 (9). 2966-2968 doi:10.1002/pssc.200779236

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE
Journalphysica status solidi (c)
AuthorsTanikawa, T.Author
Hikosaka, T.Author
Honda, Y.Author
Yamaguchi, M.Author
Sawaki, N.Author
Year2008 (July)Volume5
Issue9
PublisherWiley
DOIdoi:10.1002/pssc.200779236Search in ResearchGate
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Mindat Ref. ID5116857Long-form Identifiermindat:1:5:5116857:7
GUID0
Full ReferenceTanikawa, T., Hikosaka, T., Honda, Y., Yamaguchi, M., Sawaki, N. (2008) Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE. physica status solidi (c), 5 (9). 2966-2968 doi:10.1002/pssc.200779236
Plain TextTanikawa, T., Hikosaka, T., Honda, Y., Yamaguchi, M., Sawaki, N. (2008) Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE. physica status solidi (c), 5 (9). 2966-2968 doi:10.1002/pssc.200779236
In(2008, July) physica status solidi (c) Vol. 5 (9) Wiley

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Hikosaka, T., Tanikawa, T., Honda, Y., Yamaguchi, M., Sawaki, N. (2008) Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates. physica status solidi (c), 5 (6). 2234-2237 doi:10.1002/pssc.200778642
Tanikawa, T., Rudolph, D., Hikosaka, T., Honda, Y., Yamaguchi, M., Sawaki, N. (2008) Growth of non-polar (112¯0)GaN on a patterned (110)Si substrate by selective MOVPE. Journal of Crystal Growth, 310 (23). 4999-5002 doi:10.1016/j.jcrysgro.2008.08.059
Suzuki, N., Uchida, T., Tanikawa, T., Hikosaka, T., Honda, Y., Yamaguchi, M., Sawaki, N. (2009) HVPE growth of semi-polar (112¯2)GaN on GaN template (113)Si substrate. Journal of Crystal Growth, 311 (10). 2875-2878 doi:10.1016/j.jcrysgro.2009.01.033
Hikosaka, T., Koide, N., Honda, Y., Yamaguchi, M., Sawaki, N. (2006) p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE. physica status solidi (c), 3 (6). 1425-1428 doi:10.1002/pssc.200565305
Honda, Y., Okano, M., Yamaguchi, M., Sawaki, N. (2005) Uniform growth of GaN on AlN templated (111)Si substrate by HVPE. physica status solidi (c), 2 (7). 2125-2128 doi:10.1002/pssc.200461575
Tanikawa, Tomoyuki, Suzuki, Noriyuki, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko (2010) HVPE growth of a -plane GaN on a GaN template (110)Si substrate. physica status solidi (c), 7 (7). 1760-1763 doi:10.1002/pssc.200983563
Tanikawa, T., Kagohashi, Y., Honda, Y., Yamaguchi, M., Sawaki, N. (2009) Reduction of dislocations in a (112¯2)GaN grown by selective MOVPE on (113)Si. Journal of Crystal Growth, 311 (10). 2879-2882 doi:10.1016/j.jcrysgro.2009.01.109
Paek, J. H., Nishiwaki, T., Yamaguchi, M., Sawaki, N. (2008) MBE-VLS growth of GaAs nanowires on (111)Si substrate. physica status solidi (c), 5 (9). 2740-2742 doi:10.1002/pssc.200779248
Saida, J., Kim, E. H., Hikosaka, T., Honda, Y., Yamaguchi, M., Sawaki, N. (2008) Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN. physica status solidi (c), 5 (6). 1746-1749 doi:10.1002/pssc.200778620
Tanikawa, Tomoyuki, Murase, Tasuku, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi (2011) Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes. physica status solidi (c), 8 (7). 2038-2040 doi:10.1002/pssc.201000995
Honda, Yoshio, Kato, Satoshi, Yamaguchi, Masahito, Sawaki, Nobuhiko (2007) Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE. physica status solidi (c), 4 (7). 2740-2743 doi:10.1002/pssc.200674902
 
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