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Chen, Jiahe, Yang, Deren (2009) Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit. physica status solidi (c), 6 (3). 625-632 doi:10.1002/pssc.200880709

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Reference TypeJournal (article/letter/editorial)
TitleImpurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit
Journalphysica status solidi (c)
AuthorsChen, JiaheAuthor
Yang, DerenAuthor
Year2009 (March)Volume6
Issue3
PublisherWiley
DOIdoi:10.1002/pssc.200880709Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5118314Long-form Identifiermindat:1:5:5118314:1
GUID0
Full ReferenceChen, Jiahe, Yang, Deren (2009) Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit. physica status solidi (c), 6 (3). 625-632 doi:10.1002/pssc.200880709
Plain TextChen, Jiahe, Yang, Deren (2009) Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit. physica status solidi (c), 6 (3). 625-632 doi:10.1002/pssc.200880709
In(2009, March) physica status solidi (c) Vol. 6 (3) Wiley

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Yang, Deren, Chen, Jiahe, Ma, Xiangyang, Que, Duanlin (2009) Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits. Journal of Crystal Growth, 311 (3). 837-841 doi:10.1016/j.jcrysgro.2008.09.194
Chen, Jiahe, Vanhellemont, Jan, Simoen, Eddy, Lauwaert, Johan, Vrielinck, Henk, Rafi, Joan Marc, Ohyama, Hidenori, Weber, Jörg, Yang, Deren (2011) Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes. physica status solidi (c), 8 (3). 674-677 doi:10.1002/pssc.201000142
Chen, Jiahe, Vanhellemont, Jan, Simoen, Eddy, Lauwaert, Johan, Vrielinck, Henk, Rafi, Joan Marc, Ohyama, Hidenori, Weber, Jörg, Yang, Deren (2011) Erratum: Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes. physica status solidi (c), 8 (4). 1428 doi:10.1002/pssc.201060117
Yang, Deren (2005) Defects in germanium-doped Czochralski silicon. physica status solidi (a), 202 (5). 931-938 doi:10.1002/pssa.200460520
Chen, Jiahe, Yang, Deren, Ma, Xiangyang, Wang, Weiyan, Zeng, Yuheng, Que, Duanlin (2007) Investigation of intrinsic gettering for germanium doped Czochralski silicon wafer. Journal of Applied Physics, 101 (11). 113512pp. doi:10.1063/1.2737779
Yang, Deren, Kittler, Martin (2009) Preface: Phys. Status Solidi C 6/3. physica status solidi (c), 6 (3). 622-623 doi:10.1002/pssc.200960048
Yang, Deren, Chen, Jiahe, Li, Hong, Ma, Xiangyang, Tian, Daxi, Li, Liben, Que, Duanlin (2006) Germanium effect on oxygen-related defects in Czochralski silicon. physica status solidi (a), 203 (4). 685-695 doi:10.1002/pssa.200564507
Chen, Jiahe, Yang, Deren, Ma, Xiangyang, Que, Duanlin (2009) Rapid-thermal-anneal-based internal gettering for germanium-doped Czochralski silicon. Applied Physics A, 94. 905-910 doi:10.1007/s00339-008-4847-x
Reiche, Manfred (2009) Wafer bonding in silicon electronics. physica status solidi (c), 6 (3). 633-644 doi:10.1002/pssc.200880721
Chen, Guifeng, Li, Yangxian, Liu, Caichi (2009) Neutron irradiation defects in Czochralski silicon. physica status solidi (c), 6 (3). 669-676 doi:10.1002/pssc.200880706
SUN, Yuxin, CHEN, Jiahe, YU, Xuegong, MA, Xiangyang, YANG, Deren (2019) Impurity engineering of Czochralski silicon: effects of germanium-doping. SCIENTIA SINICA Informationis, 49 (4) 369-384 doi:10.1360/n112018-00146
 
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